Epitaxial growth and characterization of MnAs on InP and In 0.53Ga0.47As

D. Basu, P. Bhattacharya, W. Guo, H. Kum

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2 Citations (Scopus)


The heteroepitaxial growth of type-B ferromagnetic MnAs on InP and lattice matched In0.53Ga0.47As has been investigated for the first time. In situ reflection high energy electron diffraction during molecular beam epitaxy and atomic force microscopy are used to study the reconstruction and morphology, respectively, of the MnAs surface. The in-plane magnetic properties of the film are studied by magneto-optic Kerr effect measurements. The Curie temperature is estimated to be 315 K. The coercivity of 35 nm films measured at room temperature and 10 K are 860 Oe and 1410 Oe, respectively. The measured in-plane magnetocrystalline anisotropy constants Ku1 and K u2 for the film are 2.747 × 106 and 7.086 × 106 erg cm-3, respectively. The magnetization and hysteresis in the out-of-plane direction are characterized by a saturation magnetic field of 1.2 T and coercivity of 1600 Oe at 10 K.

Original languageEnglish
Article number092001
JournalJournal of Physics D: Applied Physics
Issue number9
Publication statusPublished - 2009 May 7

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films


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