Environmentally Stable, Solution-Processed Indium Boron Zinc Oxide Thin-Film Transistors

Chemistry

• Indium 100%
• Boron Atom 55%
• Zinc Oxide 44%
• Concentration 27%
• Voltage 16%
• Aqueous Solution 16%
• Spin Coating 11%
• Amorphous Material 11%
• Zinc 11%
• Compound Mobility 11%
• X-Ray Diffraction 11%
• Ion 5%
• Electrical Property 5%
• Oxide 5%
• Field Effect 5%
• Electronegativity 5%
• Lewis Acid 5%
• Particle Size 5%
• Strength 5%
• Dissociation Energy 5%

Material Science

• Thin-Film Transistor 27%
• Solution 16%
• Thin Films 11%
• High-Resolution Transmission Electron Microscopy 11%
• Amorphous Material 11%
• Protective Atmosphere 5%