Pentacene thin-film transistors (TFTs) encapsulated with a transparent SnO2 thin-film prepared by ion-beam-assisted deposition (IBAD) were fabricated. We deposited a thermally evaporated 100 nm SnO2 film on a pentacene TFT prior to IBAD as a buffer layer. After encapsulation, our TFT showed initial degradation in terms of field-effect mobility (from 0.62 to 0.5 cm2/V s). However, the mobility of 0.5 cm2/V s was sustained up to 1 month in air and before degrading to 0.35 cm2/V, which is but three times higher than that of a reference TFT without no encapsulation treatment. Under the SnO2 encapsulation, on/off current ratio was also maintained at over 105 which was initially ∼ 106, while the unprotected device displayed less than ∼ 104. Our work demonstrates that the IBAD SnO2 encapsulation is a promising technique for long-term protection of a pentacene TFT.
All Science Journal Classification (ASJC) codes
- General Chemical Engineering
- General Materials Science
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering