Enhancing defect-related photoluminescence by hot implantation into SiO2 layers

S. Im, J. Y. Jeong, M. S. Oh, H. B. Kim, K. H. Chae, C. N. Whang, J. H. Song

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22 Citations (Scopus)


Visible photoluminescence around an orange band of 580 nm wavelength are observed from 300 nm thin SiO2 layers implanted by Si or Ge ions at both substrate temperatures of 25°C [room temperature (RT)] and 400°C (hot). Si implantations at an energy of 30 keV were performed with doses of 5 × 1015, 3 × 1016, and 1 × 1017 cm-2 while Ge implantations were done at 100 keV with a dose of 5 × 1015 cm-2. Samples implanted at 400°C always show much higher intensities of luminescence than those implanted at room temperature. Electron spin resonance signals of the hot-implanted samples indicate relatively smaller amounts of nonradiative defects than those of RT-implanted samples. It is concluded that the hot-implantation effectively enhances the intensity of defect-related photoluminescence by reducing the density of the nonradiative defects and introducing the radiative defects, which contribute to the luminescence in SiO2 layers.

Original languageEnglish
Pages (from-to)961-963
Number of pages3
JournalApplied Physics Letters
Issue number7
Publication statusPublished - 1999 Feb 15

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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