Enhancing crystallinity of C60 layer by thickness-control of underneath pentacene layer for high mobility C60/pentacene ambipolar transistors

Kwangseok Ahn; Jong Beom Kim; Hyunjun Park; Hyunjung Kim; Moo Hyung Lee; Beom Joon Kim; Jeong Ho Cho; Moon Sung Kang; Dong Ryeol Lee

doi:10.1063/1.4789873

Enhancing crystallinity of C₆₀ layer by thickness-control of underneath pentacene layer for high mobility C₆₀/pentacene ambipolar transistors

Kwangseok Ahn, Jong Beom Kim, Hyunjun Park, Hyunjung Kim, Moo Hyung Lee, Beom Joon Kim, Jeong Ho Cho, Moon Sung Kang, Dong Ryeol Lee

Department of Chemical and Biomolecular Engineering

Research output: Contribution to journal › Article › peer-review

34 Citations (Scopus)

Abstract

We present systematic control of the crystallinity and electrical transport properties of C₆₀ films that are deposited onto pentacene layers, based on simple tuning of the underneath pentacene layer thickness. With increasing the pentacene layer thickness from 0 to 2 monolayers, we observed improvement in crystallinity and grain size of the C₆₀ layer, which led to dramatic enhancement in electron conduction. Also, hole transport in this bilayer structure could be generated when the thickness of the pentacene layer was above one monolayer. The resulting ambipolar transport thin-film transistors yielded electron and hole mobilities as high as 2.8 and 0.3 cm² V^-1 s^-1, respectively, and complementary inverters with gain value above 20.

Original language	English
Article number	043306
Journal	Applied Physics Letters
Volume	102
Issue number	4
DOIs	https://doi.org/10.1063/1.4789873
Publication status	Published - 2013 Jan 28

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation (NRF) of Korea funded by the MEST (2009-0076010 and R15-2008-006-01002-0). Use of the Advanced Photon Source was supported by the US Department of Energy, Office of Science, Office of Basic Energy Science, under Contract No. DE-AC02-06CH11357. Experiments at PAL were supported in part by the Ministry of Education, Science and Technology (MEST) of the Korean Government and Pohang University of Science and Technology (POSTECH).

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.4789873

Cite this

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title = "Enhancing crystallinity of C60 layer by thickness-control of underneath pentacene layer for high mobility C60/pentacene ambipolar transistors",

abstract = "We present systematic control of the crystallinity and electrical transport properties of C60 films that are deposited onto pentacene layers, based on simple tuning of the underneath pentacene layer thickness. With increasing the pentacene layer thickness from 0 to 2 monolayers, we observed improvement in crystallinity and grain size of the C60 layer, which led to dramatic enhancement in electron conduction. Also, hole transport in this bilayer structure could be generated when the thickness of the pentacene layer was above one monolayer. The resulting ambipolar transport thin-film transistors yielded electron and hole mobilities as high as 2.8 and 0.3 cm2 V-1 s-1, respectively, and complementary inverters with gain value above 20.",

author = "Kwangseok Ahn and {Beom Kim}, Jong and Hyunjun Park and Hyunjung Kim and {Hyung Lee}, Moo and {Joon Kim}, Beom and {Ho Cho}, Jeong and {Sung Kang}, Moon and Lee, {Dong Ryeol}",

note = "Funding Information: This work was supported by the National Research Foundation (NRF) of Korea funded by the MEST (2009-0076010 and R15-2008-006-01002-0). Use of the Advanced Photon Source was supported by the US Department of Energy, Office of Science, Office of Basic Energy Science, under Contract No. DE-AC02-06CH11357. Experiments at PAL were supported in part by the Ministry of Education, Science and Technology (MEST) of the Korean Government and Pohang University of Science and Technology (POSTECH).",

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doi = "10.1063/1.4789873",

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AU - Ahn, Kwangseok

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AU - Kim, Hyunjung

AU - Hyung Lee, Moo

AU - Joon Kim, Beom

AU - Ho Cho, Jeong

AU - Sung Kang, Moon

AU - Lee, Dong Ryeol

N1 - Funding Information: This work was supported by the National Research Foundation (NRF) of Korea funded by the MEST (2009-0076010 and R15-2008-006-01002-0). Use of the Advanced Photon Source was supported by the US Department of Energy, Office of Science, Office of Basic Energy Science, under Contract No. DE-AC02-06CH11357. Experiments at PAL were supported in part by the Ministry of Education, Science and Technology (MEST) of the Korean Government and Pohang University of Science and Technology (POSTECH).

PY - 2013/1/28

Y1 - 2013/1/28

N2 - We present systematic control of the crystallinity and electrical transport properties of C60 films that are deposited onto pentacene layers, based on simple tuning of the underneath pentacene layer thickness. With increasing the pentacene layer thickness from 0 to 2 monolayers, we observed improvement in crystallinity and grain size of the C60 layer, which led to dramatic enhancement in electron conduction. Also, hole transport in this bilayer structure could be generated when the thickness of the pentacene layer was above one monolayer. The resulting ambipolar transport thin-film transistors yielded electron and hole mobilities as high as 2.8 and 0.3 cm2 V-1 s-1, respectively, and complementary inverters with gain value above 20.

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