Enhancement of thermal stability in Ni silicides on Epi-Si1-x Cx by Pt addition

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The thermal stability of nickel silicides from the Ni-Pt alloy on strained epitaxial Si1-x Cx layers was evaluated. C atoms in the epitaxial Si1-x Cx layer remain in the Ni (Pt) Si/ Si 1-x Cx interface during Ni(Pt)Si formation. The decrease in interfacial energy by C segregation at the grain boundaries and interfaces enhanced the thermal stability of NiSi. The thermal stability of NiSi was greatly enhanced when Pt was added during the silicidation process. Upon increasing annealing temperatures, the sheet resistance of Ni-Pt (5 and 10 atom %) / Si0.998C0.012 decreased to a lower value because a stable Ni(Pt)Si layer is formed on the epitaxial Si0.998C 0.012 layer. The formation of a stable Ni(Pt)Si phase suppressed the agglomeration of NiSi as well as the formation of a NiSi2 phase.

Original languageEnglish
Pages (from-to)H837-H841
JournalJournal of the Electrochemical Society
Issue number8
Publication statusPublished - 2010

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Renewable Energy, Sustainability and the Environment


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