Enhancement of Switching Characteristic for p-Type Oxide Semiconductors Using Hypochlorous Acid

Tae Soo Jung; Heesoo Lee; Sung Pyo Park; Hee Jun Kim; Jin Hyeok Lee; Dongwoo Kim; Hyun Jae Kim

doi:10.1021/acsami.8b10390

Enhancement of Switching Characteristic for p-Type Oxide Semiconductors Using Hypochlorous Acid

Tae Soo Jung, Heesoo Lee, Sung Pyo Park, Hee Jun Kim, Jin Hyeok Lee, Dongwoo Kim, Hyun Jae Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

We explored the effects of hypochlorous acid (HClO) oxidation on p-type oxide semiconductors. HClO generates oxygen radicals (O·) (strong reactive oxygen species) that affect the chemical state of p-type copper oxide (CuO_x) thin films by reacting with CuO_x. On robust oxidation by HClO, the numbers of Cu-O bonds increased and the numbers of copper vacancies serving as hole carriers decreased. In the modified CuO_x thin-film transistors (TFTs), switching was evident. The subthreshold swing was 0.70 V/dec, the on-/off-current ratio was 4.86 × 10⁴, and the field effect mobility was 2.83 × 10^-3 cm²/V·s. Pristine CuO_x TFTs did not exhibit switching.

Original language	English
Pages (from-to)	32337-32343
Number of pages	7
Journal	ACS Applied Materials and Interfaces
Volume	10
Issue number	38
DOIs	https://doi.org/10.1021/acsami.8b10390
Publication status	Published - 2018 Sept 26

Bibliographical note

Publisher Copyright:
© 2018 American Chemical Society.

All Science Journal Classification (ASJC) codes

Materials Science(all)

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10.1021/acsami.8b10390

Cite this

@article{db3c9bfabfbd45d8905b912bf40f3d33,

title = "Enhancement of Switching Characteristic for p-Type Oxide Semiconductors Using Hypochlorous Acid",

abstract = "We explored the effects of hypochlorous acid (HClO) oxidation on p-type oxide semiconductors. HClO generates oxygen radicals (O·) (strong reactive oxygen species) that affect the chemical state of p-type copper oxide (CuOx) thin films by reacting with CuOx. On robust oxidation by HClO, the numbers of Cu-O bonds increased and the numbers of copper vacancies serving as hole carriers decreased. In the modified CuOx thin-film transistors (TFTs), switching was evident. The subthreshold swing was 0.70 V/dec, the on-/off-current ratio was 4.86 × 104, and the field effect mobility was 2.83 × 10-3 cm2/V·s. Pristine CuOx TFTs did not exhibit switching.",

author = "Jung, {Tae Soo} and Heesoo Lee and Park, {Sung Pyo} and Kim, {Hee Jun} and Lee, {Jin Hyeok} and Dongwoo Kim and Kim, {Hyun Jae}",

note = "Publisher Copyright: {\textcopyright} 2018 American Chemical Society.",

year = "2018",

month = sep,

day = "26",

doi = "10.1021/acsami.8b10390",

language = "English",

volume = "10",

pages = "32337--32343",

journal = "ACS Applied Materials and Interfaces",

issn = "1944-8244",

publisher = "American Chemical Society",

number = "38",

}

TY - JOUR

T1 - Enhancement of Switching Characteristic for p-Type Oxide Semiconductors Using Hypochlorous Acid

AU - Jung, Tae Soo

AU - Lee, Heesoo

AU - Park, Sung Pyo

AU - Kim, Hee Jun

AU - Lee, Jin Hyeok

AU - Kim, Dongwoo

AU - Kim, Hyun Jae

PY - 2018/9/26

Y1 - 2018/9/26

N2 - We explored the effects of hypochlorous acid (HClO) oxidation on p-type oxide semiconductors. HClO generates oxygen radicals (O·) (strong reactive oxygen species) that affect the chemical state of p-type copper oxide (CuOx) thin films by reacting with CuOx. On robust oxidation by HClO, the numbers of Cu-O bonds increased and the numbers of copper vacancies serving as hole carriers decreased. In the modified CuOx thin-film transistors (TFTs), switching was evident. The subthreshold swing was 0.70 V/dec, the on-/off-current ratio was 4.86 × 104, and the field effect mobility was 2.83 × 10-3 cm2/V·s. Pristine CuOx TFTs did not exhibit switching.

AB - We explored the effects of hypochlorous acid (HClO) oxidation on p-type oxide semiconductors. HClO generates oxygen radicals (O·) (strong reactive oxygen species) that affect the chemical state of p-type copper oxide (CuOx) thin films by reacting with CuOx. On robust oxidation by HClO, the numbers of Cu-O bonds increased and the numbers of copper vacancies serving as hole carriers decreased. In the modified CuOx thin-film transistors (TFTs), switching was evident. The subthreshold swing was 0.70 V/dec, the on-/off-current ratio was 4.86 × 104, and the field effect mobility was 2.83 × 10-3 cm2/V·s. Pristine CuOx TFTs did not exhibit switching.

UR - http://www.scopus.com/inward/record.url?scp=85053603433&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85053603433&partnerID=8YFLogxK

U2 - 10.1021/acsami.8b10390

DO - 10.1021/acsami.8b10390

M3 - Article

C2 - 30157628

AN - SCOPUS:85053603433

SN - 1944-8244

VL - 10

SP - 32337

EP - 32343

JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

IS - 38

ER -

Enhancement of Switching Characteristic for p-Type Oxide Semiconductors Using Hypochlorous Acid

Abstract

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