Abstract
To enhance the emission current of silicon field emitter, it has been coated with nitrogenated amorphous carbon (a-C:N) by helical resonator plasma enhanced chemical vapor deposition. The a-C:N film is amorphous and hydrogenated with about 30 at% hydrogen. Nitrogen is also included in the amorphous network. Nitrogen in the films reduces the optical band gap resulting in more efficient electron transport. The I-V characteristics show good F-N behavior for silicon and a-C:N coated emitters, a-C:N coating enhances significantly the emission current of silicon tips.
| Original language | English |
|---|---|
| Pages | 210-211 |
| Number of pages | 2 |
| Publication status | Published - 1998 |
| Event | Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC - Asheville, NC, USA Duration: 1998 Jul 19 → 1998 Jul 24 |
Other
| Other | Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC |
|---|---|
| City | Asheville, NC, USA |
| Period | 98/7/19 → 98/7/24 |
All Science Journal Classification (ASJC) codes
- Surfaces and Interfaces