Enhancement in the rate of the top seeded solution growth of SiC crystals via a roughening of the graphite surface

Ji Young Yoon; Myung Hyun Lee; Younghee Kim; Won Seon Seo; Yong Gun Shul; Won Jae Lee; Seong Min Jeong

doi:10.7567/JJAP.56.065501

Enhancement in the rate of the top seeded solution growth of SiC crystals via a roughening of the graphite surface

Ji Young Yoon, Myung Hyun Lee, Younghee Kim, Won Seon Seo, Yong Gun Shul, Won Jae Lee, Seong Min Jeong

Department of Chemical and Biomolecular Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

With the top seeded solution growth (TSSG) method, SiC crystals are grown in a Si-C solution where the dissolved C is supplied from graphite crucibles. In this study, the reactivity of the graphite was enhanced by roughening the surface to form a SiC interlayer, the intermediate compound in the dissolution of C to a Si melt. As a result, we clearly observed an enhancement in the growth rate by roughening the graphite surface in the crystal growth of SiC using TSSG method.

Original language	English
Article number	065501
Journal	Japanese journal of applied physics
Volume	56
Issue number	6
DOIs	https://doi.org/10.7567/JJAP.56.065501
Publication status	Published - 2017 Jun

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Publisher Copyright:
© 2017 The Japan Society of Applied Physics.

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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@article{ff8a2615716c47f182abc0d6df69156f,

title = "Enhancement in the rate of the top seeded solution growth of SiC crystals via a roughening of the graphite surface",

abstract = "With the top seeded solution growth (TSSG) method, SiC crystals are grown in a Si-C solution where the dissolved C is supplied from graphite crucibles. In this study, the reactivity of the graphite was enhanced by roughening the surface to form a SiC interlayer, the intermediate compound in the dissolution of C to a Si melt. As a result, we clearly observed an enhancement in the growth rate by roughening the graphite surface in the crystal growth of SiC using TSSG method.",

author = "Yoon, {Ji Young} and Lee, {Myung Hyun} and Younghee Kim and Seo, {Won Seon} and Shul, {Yong Gun} and Lee, {Won Jae} and Jeong, {Seong Min}",

note = "Publisher Copyright: {\textcopyright} 2017 The Japan Society of Applied Physics.",

year = "2017",

month = jun,

doi = "10.7567/JJAP.56.065501",

language = "English",

volume = "56",

journal = "Japanese journal of applied physics",

issn = "0021-4922",

number = "6",

}

TY - JOUR

T1 - Enhancement in the rate of the top seeded solution growth of SiC crystals via a roughening of the graphite surface

AU - Yoon, Ji Young

AU - Lee, Myung Hyun

AU - Kim, Younghee

AU - Seo, Won Seon

AU - Shul, Yong Gun

AU - Lee, Won Jae

AU - Jeong, Seong Min

PY - 2017/6

Y1 - 2017/6

N2 - With the top seeded solution growth (TSSG) method, SiC crystals are grown in a Si-C solution where the dissolved C is supplied from graphite crucibles. In this study, the reactivity of the graphite was enhanced by roughening the surface to form a SiC interlayer, the intermediate compound in the dissolution of C to a Si melt. As a result, we clearly observed an enhancement in the growth rate by roughening the graphite surface in the crystal growth of SiC using TSSG method.

AB - With the top seeded solution growth (TSSG) method, SiC crystals are grown in a Si-C solution where the dissolved C is supplied from graphite crucibles. In this study, the reactivity of the graphite was enhanced by roughening the surface to form a SiC interlayer, the intermediate compound in the dissolution of C to a Si melt. As a result, we clearly observed an enhancement in the growth rate by roughening the graphite surface in the crystal growth of SiC using TSSG method.

UR - http://www.scopus.com/inward/record.url?scp=85020188392&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85020188392&partnerID=8YFLogxK

U2 - 10.7567/JJAP.56.065501

DO - 10.7567/JJAP.56.065501

M3 - Article

AN - SCOPUS:85020188392

SN - 0021-4922

VL - 56

JO - Japanese journal of applied physics

JF - Japanese journal of applied physics

IS - 6

M1 - 065501

ER -

Enhancement in the rate of the top seeded solution growth of SiC crystals via a roughening of the graphite surface

Abstract

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