Enhanced tunneling properties of band-engineered (HfO2) x(SiO2)1-x/SiO2 double dielectric layers for non-volatile flash memory device

Min Young Heo; Jonggi Kim; Hae Yoon Kang; Jinho Oh; Kyumin Lee; Hyunchul Sohn

doi:10.1016/j.cap.2010.11.118

Enhanced tunneling properties of band-engineered (HfO₂) _x(SiO₂)_1-x/SiO₂ double dielectric layers for non-volatile flash memory device

Min Young Heo, Jonggi Kim, Hae Yoon Kang, Jinho Oh, Kyumin Lee, Hyunchul Sohn

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

High-k dielectric material stacks are considered to be a good candidate for tunnel barrier, replacing single SiO₂ tunnel dielectrics in non-volatile flash memory. The use of low-k/high-k tunnel barriers was expected to enhance the electric field sensitivity with possibility of the reduction in operation voltage for Flash devices. In this work, we investigated the physical properties of (HfO₂)_x(SiO₂)_1-x with various compositions in conjunction with the tunneling characteristics of (HfO₂)_x(SiO₂)_1-x/SiO₂ double dielectric structure for the application to charge trap flash memory(CTF) devices. The band-engineered (HfO₂)_x(SiO ₂)_1-x/SiO₂ double dielectric structure showed enhanced tunneling current above 2 V, while showed smaller tunneling current below 2 V because of increasing physical thickness of designed double layer structures. The band-engineered charge trap (CTD) device with (HfO ₂)_x(SiO₂)_1-x/SiO₂ double dielectric structure showed faster program/erase speed and larger memory window at same time and voltage compared to the CTD with a single SiO₂ tunnel barrier.

Original language	English
Pages (from-to)	e16-e20
Journal	Current Applied Physics
Volume	11
Issue number	2 SUPPL.
DOIs	https://doi.org/10.1016/j.cap.2010.11.118
Publication status	Published - 2011 Mar

Bibliographical note

Funding Information:
This work was supported by “National Program for 0.1-Terabit Non-volatile Memory Device Development” sponsored by Korean Ministry of Knowledge Economy in 2010 and the Brain Korea 21 project (BK21) . We utilized the XPS instrument at Korea Basic Science Institute (KBSI).

All Science Journal Classification (ASJC) codes

Materials Science(all)
Physics and Astronomy(all)

Access to Document

10.1016/j.cap.2010.11.118

Cite this

@article{7287625da9074944bf848385153b6407,

title = "Enhanced tunneling properties of band-engineered (HfO2) x(SiO2)1-x/SiO2 double dielectric layers for non-volatile flash memory device",

abstract = "High-k dielectric material stacks are considered to be a good candidate for tunnel barrier, replacing single SiO2 tunnel dielectrics in non-volatile flash memory. The use of low-k/high-k tunnel barriers was expected to enhance the electric field sensitivity with possibility of the reduction in operation voltage for Flash devices. In this work, we investigated the physical properties of (HfO2)x(SiO2)1-x with various compositions in conjunction with the tunneling characteristics of (HfO2)x(SiO2)1-x/SiO2 double dielectric structure for the application to charge trap flash memory(CTF) devices. The band-engineered (HfO2)x(SiO 2)1-x/SiO2 double dielectric structure showed enhanced tunneling current above 2 V, while showed smaller tunneling current below 2 V because of increasing physical thickness of designed double layer structures. The band-engineered charge trap (CTD) device with (HfO 2)x(SiO2)1-x/SiO2 double dielectric structure showed faster program/erase speed and larger memory window at same time and voltage compared to the CTD with a single SiO2 tunnel barrier.",

author = "Heo, {Min Young} and Jonggi Kim and Kang, {Hae Yoon} and Jinho Oh and Kyumin Lee and Hyunchul Sohn",

note = "Funding Information: This work was supported by “National Program for 0.1-Terabit Non-volatile Memory Device Development” sponsored by Korean Ministry of Knowledge Economy in 2010 and the Brain Korea 21 project (BK21) . We utilized the XPS instrument at Korea Basic Science Institute (KBSI).",

year = "2011",

month = mar,

doi = "10.1016/j.cap.2010.11.118",

language = "English",

volume = "11",

pages = "e16--e20",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier",

number = "2 SUPPL.",

}

TY - JOUR

T1 - Enhanced tunneling properties of band-engineered (HfO2) x(SiO2)1-x/SiO2 double dielectric layers for non-volatile flash memory device

AU - Heo, Min Young

AU - Kim, Jonggi

AU - Kang, Hae Yoon

AU - Oh, Jinho

AU - Lee, Kyumin

AU - Sohn, Hyunchul

N1 - Funding Information: This work was supported by “National Program for 0.1-Terabit Non-volatile Memory Device Development” sponsored by Korean Ministry of Knowledge Economy in 2010 and the Brain Korea 21 project (BK21) . We utilized the XPS instrument at Korea Basic Science Institute (KBSI).

PY - 2011/3

Y1 - 2011/3

N2 - High-k dielectric material stacks are considered to be a good candidate for tunnel barrier, replacing single SiO2 tunnel dielectrics in non-volatile flash memory. The use of low-k/high-k tunnel barriers was expected to enhance the electric field sensitivity with possibility of the reduction in operation voltage for Flash devices. In this work, we investigated the physical properties of (HfO2)x(SiO2)1-x with various compositions in conjunction with the tunneling characteristics of (HfO2)x(SiO2)1-x/SiO2 double dielectric structure for the application to charge trap flash memory(CTF) devices. The band-engineered (HfO2)x(SiO 2)1-x/SiO2 double dielectric structure showed enhanced tunneling current above 2 V, while showed smaller tunneling current below 2 V because of increasing physical thickness of designed double layer structures. The band-engineered charge trap (CTD) device with (HfO 2)x(SiO2)1-x/SiO2 double dielectric structure showed faster program/erase speed and larger memory window at same time and voltage compared to the CTD with a single SiO2 tunnel barrier.

AB - High-k dielectric material stacks are considered to be a good candidate for tunnel barrier, replacing single SiO2 tunnel dielectrics in non-volatile flash memory. The use of low-k/high-k tunnel barriers was expected to enhance the electric field sensitivity with possibility of the reduction in operation voltage for Flash devices. In this work, we investigated the physical properties of (HfO2)x(SiO2)1-x with various compositions in conjunction with the tunneling characteristics of (HfO2)x(SiO2)1-x/SiO2 double dielectric structure for the application to charge trap flash memory(CTF) devices. The band-engineered (HfO2)x(SiO 2)1-x/SiO2 double dielectric structure showed enhanced tunneling current above 2 V, while showed smaller tunneling current below 2 V because of increasing physical thickness of designed double layer structures. The band-engineered charge trap (CTD) device with (HfO 2)x(SiO2)1-x/SiO2 double dielectric structure showed faster program/erase speed and larger memory window at same time and voltage compared to the CTD with a single SiO2 tunnel barrier.

UR - http://www.scopus.com/inward/record.url?scp=79960928383&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79960928383&partnerID=8YFLogxK

U2 - 10.1016/j.cap.2010.11.118

DO - 10.1016/j.cap.2010.11.118

M3 - Article

AN - SCOPUS:79960928383

SN - 1567-1739

VL - 11

SP - e16-e20

JO - Current Applied Physics

JF - Current Applied Physics

IS - 2 SUPPL.

ER -