Enhanced tunneling magnetoresistance and thermal stability of magnetic tunnel junction by rapid thermal anneal

K. I. Lee; J. H. Lee; W. Y. Lee; K. W. Rhie; J. G. Ha; C. S. Kim; K. H. Shin

doi:10.1016/S0304-8853(01)00580-7

Enhanced tunneling magnetoresistance and thermal stability of magnetic tunnel junction by rapid thermal anneal

K. I. Lee, J. H. Lee, W. Y. Lee, K. W. Rhie, J. G. Ha, C. S. Kim, K. H. Shin

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

The effect of rapid thermal anneal (RTA) has been investigated on the properties of an FeMn exchange-biased magnetic tunnel junction (MTJ) using magnetoresistance and I-V measurements and transmission electron microscopy (TEM). The tunneling magnetoresistance (TMR) in an as-grown MTJ is found to be ∼27%, while the TMR in MTJs annealed by RTA increases with annealing temperature up to 300°C, reaching ∼l46%. TEM images reveal that the interface of Al₂O₃ layer for the annealed MTJ has changed into a relatively clear morphology, as compared to that for the as-grown MTJ. The oxide barrier parameters are found to vary abruptly with annealing time within a few ten seconds. Our results demonstrate that the present RTA enhances the thermal stability of MTJs.

Original language	English
Pages (from-to)	120-122
Number of pages	3
Journal	Journal of Magnetism and Magnetic Materials
Volume	239
Issue number	1-3
DOIs	https://doi.org/10.1016/S0304-8853(01)00580-7
Publication status	Published - 2002 Feb

Bibliographical note

Funding Information:
This work was supported by the National Program for Tera-level Nanodevices of the Ministry of Science and Technology and the research grant of Kwangwoon University in 2000.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1016/S0304-8853(01)00580-7

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title = "Enhanced tunneling magnetoresistance and thermal stability of magnetic tunnel junction by rapid thermal anneal",

abstract = "The effect of rapid thermal anneal (RTA) has been investigated on the properties of an FeMn exchange-biased magnetic tunnel junction (MTJ) using magnetoresistance and I-V measurements and transmission electron microscopy (TEM). The tunneling magnetoresistance (TMR) in an as-grown MTJ is found to be ∼27%, while the TMR in MTJs annealed by RTA increases with annealing temperature up to 300°C, reaching ∼l46%. TEM images reveal that the interface of Al2O3 layer for the annealed MTJ has changed into a relatively clear morphology, as compared to that for the as-grown MTJ. The oxide barrier parameters are found to vary abruptly with annealing time within a few ten seconds. Our results demonstrate that the present RTA enhances the thermal stability of MTJs.",

author = "Lee, {K. I.} and Lee, {J. H.} and Lee, {W. Y.} and Rhie, {K. W.} and Ha, {J. G.} and Kim, {C. S.} and Shin, {K. H.}",

note = "Funding Information: This work was supported by the National Program for Tera-level Nanodevices of the Ministry of Science and Technology and the research grant of Kwangwoon University in 2000.",

year = "2002",

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doi = "10.1016/S0304-8853(01)00580-7",

language = "English",

volume = "239",

pages = "120--122",

journal = "Journal of Magnetism and Magnetic Materials",

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TY - JOUR

T1 - Enhanced tunneling magnetoresistance and thermal stability of magnetic tunnel junction by rapid thermal anneal

AU - Lee, K. I.

AU - Lee, J. H.

AU - Lee, W. Y.

AU - Rhie, K. W.

AU - Ha, J. G.

AU - Kim, C. S.

AU - Shin, K. H.

N1 - Funding Information: This work was supported by the National Program for Tera-level Nanodevices of the Ministry of Science and Technology and the research grant of Kwangwoon University in 2000.

PY - 2002/2

Y1 - 2002/2

N2 - The effect of rapid thermal anneal (RTA) has been investigated on the properties of an FeMn exchange-biased magnetic tunnel junction (MTJ) using magnetoresistance and I-V measurements and transmission electron microscopy (TEM). The tunneling magnetoresistance (TMR) in an as-grown MTJ is found to be ∼27%, while the TMR in MTJs annealed by RTA increases with annealing temperature up to 300°C, reaching ∼l46%. TEM images reveal that the interface of Al2O3 layer for the annealed MTJ has changed into a relatively clear morphology, as compared to that for the as-grown MTJ. The oxide barrier parameters are found to vary abruptly with annealing time within a few ten seconds. Our results demonstrate that the present RTA enhances the thermal stability of MTJs.

AB - The effect of rapid thermal anneal (RTA) has been investigated on the properties of an FeMn exchange-biased magnetic tunnel junction (MTJ) using magnetoresistance and I-V measurements and transmission electron microscopy (TEM). The tunneling magnetoresistance (TMR) in an as-grown MTJ is found to be ∼27%, while the TMR in MTJs annealed by RTA increases with annealing temperature up to 300°C, reaching ∼l46%. TEM images reveal that the interface of Al2O3 layer for the annealed MTJ has changed into a relatively clear morphology, as compared to that for the as-grown MTJ. The oxide barrier parameters are found to vary abruptly with annealing time within a few ten seconds. Our results demonstrate that the present RTA enhances the thermal stability of MTJs.

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U2 - 10.1016/S0304-8853(01)00580-7

DO - 10.1016/S0304-8853(01)00580-7

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SN - 0304-8853

VL - 239

SP - 120

EP - 122

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - 1-3

ER -

Enhanced tunneling magnetoresistance and thermal stability of magnetic tunnel junction by rapid thermal anneal

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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