@inproceedings{cba2c22fdb0c4c83aa29e32bad3f4ba0,
title = "Enhanced prformance in SOI FinFETs with low series resistance by aluminum implant as a solution beyond 22nm node",
abstract = "We present an approach to scale Rext while maintaining control of short channel effects in scaled finFETs. For FETs with fins <20nm, an enhancement of 19% in drain current was achieved in nFETs by incorporating Al at silicide-Si interface. This Al implantation while reducing the Schottky barrier height for n-Si contact by 0.4 eV, does not degrade the integrity of the junction extensions or gate stacks. These attributes constitute a simple non-planar cMOS integration sequence for enhancing future high performance technology nodes.",
author = "I. Ok and Young, {C. D.} and Loh, {W. Y.} and T. Ngai and S. Lian and J. Oh and Rodgers, {M. P.} and S. Bennett and Stamper, {H. O.} and Franca, {D. L.} and S. Lin and K. Akarvardar and C. Smith and C. Hobbs and P. Kirsch and R. Jammy",
year = "2010",
doi = "10.1109/VLSIT.2010.5556138",
language = "English",
isbn = "9781424476374",
series = "Digest of Technical Papers - Symposium on VLSI Technology",
pages = "17--18",
booktitle = "2010 Symposium on VLSI Technology, VLSIT 2010",
note = "2010 Symposium on VLSI Technology, VLSIT 2010 ; Conference date: 15-06-2010 Through 17-06-2010",
}