Topological insulators (TIs) have become popular in the field of optoelectronic devices because of their broadband and high-sensitivity properties, which are attributed to the narrow band gap of the bulk state and high mobility of the Dirac surface state. Although perfectly grown TIs are known to exhibit strong stability against oxidation, in most cases, the existence of vacancy defects in TIs reacts to air and the characteristics of TIs is affected by oxidation. Therefore, changes in the band structure and electrical characteristics by oxidation should be considered. A significant change occurs because of the oxidation; however, the dependence of the photoresponse of TIs on oxidation has not been studied in detail. In this study, the photoresponsivity of oxidized Bi2Se3 films is enhanced, rather than degraded, after oxidation in air for 24 h, resulting in a maximum responsivity of 140 mA W-1. This responsivity is substantially higher than previously reported values for Bi2Se3. Furthermore, a change in the photoresponse time of Bi2Se3 due to air exposure is systematically observed. Based on variations in the Fermi level and work function, using photoelectron spectroscopy, it is confirmed that the responsivity is improved from the junction effect of the Bi-based surface oxidized layer.
Bibliographical noteFunding Information:
We acknowledge the financial support provided by National Research Foundation of Korea (NRF) grant funded by the Korea government (grant no. 2018R1A2A1A05023214, MSIP), SRC program (grant no. 2017R1A5A1014862, SRC program vdWMRC center), and the academy-industry joint research program between Yonsei University and Samsung Electronics.
Copyright © 2020 American Chemical Society.
All Science Journal Classification (ASJC) codes
- Materials Science(all)