Enhanced performance of solution-processed amorphous LiYInZnO thin-film transistors

Chang Young Koo, Keunkyu Song, Yangho Jung, Wooseok Yang, Seung Hyun Kim, Sunho Jeong, Jooho Moon

Research output: Contribution to journalArticlepeer-review

43 Citations (Scopus)


Solution-processed, amorphous lithium-doped YInZnO (L-YIZO) thin-film transistors (TFTs) are investigated. An appropriate amount of Li doping significantly enhances the field-effect mobility in TFT performance (∼15 times greater than that of nondoped YIZO) without controlled annealing under water vapor or O 3/O 2 environments. The addition of Li into solution-processed YIZO semiconductors leads to improved film quality, which results from enriched metal oxygen bonding and reduced defect sites, such as oxygen vacancies and hydroxyl groups. Li doping of an amorphous ionic oxide semiconductor (AIOS) could serve as an effective strategy for low-temperature and high-performance solution-processed AIOS TFTs.

Original languageEnglish
Pages (from-to)1456-1461
Number of pages6
JournalACS Applied Materials and Interfaces
Issue number3
Publication statusPublished - 2012 Mar 28

All Science Journal Classification (ASJC) codes

  • General Materials Science


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