Enhanced performance of solution-processed amorphous gallium-doped indium oxide thin-film transistors after hydrogen peroxide vapor treatment

Jee Ho Park; Young Bum Yoo; Jin Young Oh; Ji Hoon Lee; Tae Il Lee; Hong Koo Baik

doi:10.7567/APEX.7.051101

Enhanced performance of solution-processed amorphous gallium-doped indium oxide thin-film transistors after hydrogen peroxide vapor treatment

Jee Ho Park, Young Bum Yoo, Jin Young Oh, Ji Hoon Lee, Tae Il Lee, Hong Koo Baik

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

We fabricated solution-processed gallium-doped indium oxide (GIO) thin-film transistors (TFTs) and performed hydrogen peroxide (H₂O₂) vapor treatment at 350 °C. We demonstrated that H₂O and H ₂O₂ vapor treatment enhanced the performance of the GIO TFTs. The GIO TFT only annealed in ambient air at 350 °C performed very poorly, whereas those annealed in air with H₂O₂ and H ₂O vapor at 350 °C exhibited significantly improved electrical performance. In particular, the H₂O₂-vapor-treated GIO TFTs had a mobility of 3.22 cm²V^-1 s^-1. We believe that this method can help decrease the annealing temperature in order to obtain high-performance GIO TFTs.

Original language	English
Article number	051101
Journal	Applied Physics Express
Volume	7
Issue number	5
DOIs	https://doi.org/10.7567/APEX.7.051101
Publication status	Published - 2014 May

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.7567/APEX.7.051101

Cite this

@article{29199face22a4d86a0fe899f2835bce0,

title = "Enhanced performance of solution-processed amorphous gallium-doped indium oxide thin-film transistors after hydrogen peroxide vapor treatment",

abstract = "We fabricated solution-processed gallium-doped indium oxide (GIO) thin-film transistors (TFTs) and performed hydrogen peroxide (H2O2) vapor treatment at 350 °C. We demonstrated that H2O and H 2O2 vapor treatment enhanced the performance of the GIO TFTs. The GIO TFT only annealed in ambient air at 350 °C performed very poorly, whereas those annealed in air with H2O2 and H 2O vapor at 350 °C exhibited significantly improved electrical performance. In particular, the H2O2-vapor-treated GIO TFTs had a mobility of 3.22 cm2V-1 s-1. We believe that this method can help decrease the annealing temperature in order to obtain high-performance GIO TFTs.",

author = "Park, {Jee Ho} and Yoo, {Young Bum} and Oh, {Jin Young} and Lee, {Ji Hoon} and Lee, {Tae Il} and Baik, {Hong Koo}",

year = "2014",

month = may,

doi = "10.7567/APEX.7.051101",

language = "English",

volume = "7",

journal = "Applied Physics Express",

issn = "1882-0778",

publisher = "Japan Society of Applied Physics",

number = "5",

}

TY - JOUR

T1 - Enhanced performance of solution-processed amorphous gallium-doped indium oxide thin-film transistors after hydrogen peroxide vapor treatment

AU - Park, Jee Ho

AU - Yoo, Young Bum

AU - Oh, Jin Young

AU - Lee, Ji Hoon

AU - Lee, Tae Il

AU - Baik, Hong Koo

PY - 2014/5

Y1 - 2014/5

N2 - We fabricated solution-processed gallium-doped indium oxide (GIO) thin-film transistors (TFTs) and performed hydrogen peroxide (H2O2) vapor treatment at 350 °C. We demonstrated that H2O and H 2O2 vapor treatment enhanced the performance of the GIO TFTs. The GIO TFT only annealed in ambient air at 350 °C performed very poorly, whereas those annealed in air with H2O2 and H 2O vapor at 350 °C exhibited significantly improved electrical performance. In particular, the H2O2-vapor-treated GIO TFTs had a mobility of 3.22 cm2V-1 s-1. We believe that this method can help decrease the annealing temperature in order to obtain high-performance GIO TFTs.

AB - We fabricated solution-processed gallium-doped indium oxide (GIO) thin-film transistors (TFTs) and performed hydrogen peroxide (H2O2) vapor treatment at 350 °C. We demonstrated that H2O and H 2O2 vapor treatment enhanced the performance of the GIO TFTs. The GIO TFT only annealed in ambient air at 350 °C performed very poorly, whereas those annealed in air with H2O2 and H 2O vapor at 350 °C exhibited significantly improved electrical performance. In particular, the H2O2-vapor-treated GIO TFTs had a mobility of 3.22 cm2V-1 s-1. We believe that this method can help decrease the annealing temperature in order to obtain high-performance GIO TFTs.

UR - http://www.scopus.com/inward/record.url?scp=84904661268&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84904661268&partnerID=8YFLogxK

U2 - 10.7567/APEX.7.051101

DO - 10.7567/APEX.7.051101

M3 - Article

AN - SCOPUS:84904661268

SN - 1882-0778

VL - 7

JO - Applied Physics Express

JF - Applied Physics Express

IS - 5

M1 - 051101

ER -

Enhanced performance of solution-processed amorphous gallium-doped indium oxide thin-film transistors after hydrogen peroxide vapor treatment

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this