Enhanced Light Stability of InGaZnO Thin-Film Transistors by Atomic-Layer-Deposited Y2O3 with Ozone

Hanearl Jung; Woo Hee Kim; Bo Eun Park; Whang Je Woo; Il Kwon Oh; Su Jeong Lee; Yun Cheol Kim; Jae Min Myoung; Satoko Gatineau; Christian Dussarrat; Hyungjun Kim

doi:10.1021/acsami.7b14260

Enhanced Light Stability of InGaZnO Thin-Film Transistors by Atomic-Layer-Deposited Y₂O₃ with Ozone

Hanearl Jung, Woo Hee Kim, Bo Eun Park, Whang Je Woo, Il Kwon Oh, Su Jeong Lee, Yun Cheol Kim, Jae Min Myoung, Satoko Gatineau, Christian Dussarrat, Hyungjun Kim

Research output: Contribution to journal › Article › peer-review

39 Citations (Scopus)

Abstract

We report the effect of Y₂O₃ passivation by atomic layer deposition (ALD) using various oxidants, such as H₂O, O₂ plasma, and O₃, on In-Ga-Zn-O thin-film transistors (IGZO TFTs). A large negative shift in the threshold voltage (V_th) was observed in the case of the TFT subjected to the H₂O-ALD Y₂O₃ process; this shift was caused by a donor effect of negatively charged chemisorbed H₂O molecules. In addition, degradation of the IGZO TFT device performance after the O₂ plasma-ALD Y₂O₃ process (field-effect mobility (μ) = 8.7 cm²/(V·s), subthreshold swing (SS) = 0.77 V/dec, and V_th = 3.7 V) was observed, which was attributed to plasma damage on the IGZO surface adversely affecting the stability of the TFT under light illumination. In contrast, the O₃-ALD Y₂O₃ process led to enhanced device stability under light illumination (ΔV_th = -1 V after 3 h of illumination) by passivating the subgap defect states in the IGZO surface region. In addition, TFTs with a thicker IGZO film (55 nm, which was the optimum thickness under the current investigation) showed more stable device performance than TFTs with a thinner IGZO film (30 nm) (ΔV_th = -0.4 V after 3 h of light illumination) by triggering the recombination of holes diffusing from the IGZO surface to the insulator-channel interface. Therefore, we envisioned that the O₃-ALD Y₂O₃ passivation layer suggested in this paper can improve the photostability of TFTs under light illumination.

Original language	English
Pages (from-to)	2143-2150
Number of pages	8
Journal	ACS Applied Materials and Interfaces
Volume	10
Issue number	2
DOIs	https://doi.org/10.1021/acsami.7b14260
Publication status	Published - 2018 Jan 17

Bibliographical note

Funding Information:
This work was supported by Air Liquide Laboratories Korea, Seoul, South Korea, as a precursor supplier. This work was also supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (no. NRF-2017R1C1B5076821) and the Center for Integrated Smart Sensors funded by the Ministry of Science, ICT & Future Planning as Global Frontier Project (CISS-2016M3A6A6930869).

Publisher Copyright:
© 2017 American Chemical Society.

All Science Journal Classification (ASJC) codes

Materials Science(all)

Access to Document

10.1021/acsami.7b14260

Cite this

@article{bbf2aedc71354c0e824ba24e82c5296e,

title = "Enhanced Light Stability of InGaZnO Thin-Film Transistors by Atomic-Layer-Deposited Y2O3 with Ozone",

abstract = "We report the effect of Y2O3 passivation by atomic layer deposition (ALD) using various oxidants, such as H2O, O2 plasma, and O3, on In-Ga-Zn-O thin-film transistors (IGZO TFTs). A large negative shift in the threshold voltage (Vth) was observed in the case of the TFT subjected to the H2O-ALD Y2O3 process; this shift was caused by a donor effect of negatively charged chemisorbed H2O molecules. In addition, degradation of the IGZO TFT device performance after the O2 plasma-ALD Y2O3 process (field-effect mobility (μ) = 8.7 cm2/(V·s), subthreshold swing (SS) = 0.77 V/dec, and Vth = 3.7 V) was observed, which was attributed to plasma damage on the IGZO surface adversely affecting the stability of the TFT under light illumination. In contrast, the O3-ALD Y2O3 process led to enhanced device stability under light illumination (ΔVth = -1 V after 3 h of illumination) by passivating the subgap defect states in the IGZO surface region. In addition, TFTs with a thicker IGZO film (55 nm, which was the optimum thickness under the current investigation) showed more stable device performance than TFTs with a thinner IGZO film (30 nm) (ΔVth = -0.4 V after 3 h of light illumination) by triggering the recombination of holes diffusing from the IGZO surface to the insulator-channel interface. Therefore, we envisioned that the O3-ALD Y2O3 passivation layer suggested in this paper can improve the photostability of TFTs under light illumination.",

author = "Hanearl Jung and Kim, {Woo Hee} and Park, {Bo Eun} and Woo, {Whang Je} and Oh, {Il Kwon} and Lee, {Su Jeong} and Kim, {Yun Cheol} and Myoung, {Jae Min} and Satoko Gatineau and Christian Dussarrat and Hyungjun Kim",

note = "Funding Information: This work was supported by Air Liquide Laboratories Korea, Seoul, South Korea, as a precursor supplier. This work was also supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (no. NRF-2017R1C1B5076821) and the Center for Integrated Smart Sensors funded by the Ministry of Science, ICT & Future Planning as Global Frontier Project (CISS-2016M3A6A6930869). Publisher Copyright: {\textcopyright} 2017 American Chemical Society.",

year = "2018",

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doi = "10.1021/acsami.7b14260",

language = "English",

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TY - JOUR

T1 - Enhanced Light Stability of InGaZnO Thin-Film Transistors by Atomic-Layer-Deposited Y2O3 with Ozone

AU - Jung, Hanearl

AU - Kim, Woo Hee

AU - Park, Bo Eun

AU - Woo, Whang Je

AU - Oh, Il Kwon

AU - Lee, Su Jeong

AU - Kim, Yun Cheol

AU - Myoung, Jae Min

AU - Gatineau, Satoko

AU - Dussarrat, Christian

AU - Kim, Hyungjun

N1 - Funding Information: This work was supported by Air Liquide Laboratories Korea, Seoul, South Korea, as a precursor supplier. This work was also supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (no. NRF-2017R1C1B5076821) and the Center for Integrated Smart Sensors funded by the Ministry of Science, ICT & Future Planning as Global Frontier Project (CISS-2016M3A6A6930869). Publisher Copyright: © 2017 American Chemical Society.

PY - 2018/1/17

Y1 - 2018/1/17

N2 - We report the effect of Y2O3 passivation by atomic layer deposition (ALD) using various oxidants, such as H2O, O2 plasma, and O3, on In-Ga-Zn-O thin-film transistors (IGZO TFTs). A large negative shift in the threshold voltage (Vth) was observed in the case of the TFT subjected to the H2O-ALD Y2O3 process; this shift was caused by a donor effect of negatively charged chemisorbed H2O molecules. In addition, degradation of the IGZO TFT device performance after the O2 plasma-ALD Y2O3 process (field-effect mobility (μ) = 8.7 cm2/(V·s), subthreshold swing (SS) = 0.77 V/dec, and Vth = 3.7 V) was observed, which was attributed to plasma damage on the IGZO surface adversely affecting the stability of the TFT under light illumination. In contrast, the O3-ALD Y2O3 process led to enhanced device stability under light illumination (ΔVth = -1 V after 3 h of illumination) by passivating the subgap defect states in the IGZO surface region. In addition, TFTs with a thicker IGZO film (55 nm, which was the optimum thickness under the current investigation) showed more stable device performance than TFTs with a thinner IGZO film (30 nm) (ΔVth = -0.4 V after 3 h of light illumination) by triggering the recombination of holes diffusing from the IGZO surface to the insulator-channel interface. Therefore, we envisioned that the O3-ALD Y2O3 passivation layer suggested in this paper can improve the photostability of TFTs under light illumination.

AB - We report the effect of Y2O3 passivation by atomic layer deposition (ALD) using various oxidants, such as H2O, O2 plasma, and O3, on In-Ga-Zn-O thin-film transistors (IGZO TFTs). A large negative shift in the threshold voltage (Vth) was observed in the case of the TFT subjected to the H2O-ALD Y2O3 process; this shift was caused by a donor effect of negatively charged chemisorbed H2O molecules. In addition, degradation of the IGZO TFT device performance after the O2 plasma-ALD Y2O3 process (field-effect mobility (μ) = 8.7 cm2/(V·s), subthreshold swing (SS) = 0.77 V/dec, and Vth = 3.7 V) was observed, which was attributed to plasma damage on the IGZO surface adversely affecting the stability of the TFT under light illumination. In contrast, the O3-ALD Y2O3 process led to enhanced device stability under light illumination (ΔVth = -1 V after 3 h of illumination) by passivating the subgap defect states in the IGZO surface region. In addition, TFTs with a thicker IGZO film (55 nm, which was the optimum thickness under the current investigation) showed more stable device performance than TFTs with a thinner IGZO film (30 nm) (ΔVth = -0.4 V after 3 h of light illumination) by triggering the recombination of holes diffusing from the IGZO surface to the insulator-channel interface. Therefore, we envisioned that the O3-ALD Y2O3 passivation layer suggested in this paper can improve the photostability of TFTs under light illumination.

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