Abstract
A signi?cant enhancement in the light output from nano-patterned InP substrate covered with a nanoporous alumina mask was observed. A uniform nanohole array on an InP semiconductor substrate was fabricated by inductively coupled plasma reactive ion etching (ICP-RIE), using the nanoporous alumina mask as a shadow mask. The light output property of the semiconductor substrate was investigated via photoluminescence (PL) intensity measurement. The InP substrate with a nanohole array showed a more enhanced PL intensity compared with the raw InP substrate without a nanohole structure. After ICP-RIE etching, the light output from the nanoporous InP substrate covered with a nanoporous alumina mask showed fourfold enhanced PL intensity compared with the raw InP substrate. These results can be used as a prospective method for increasing the light output ef?ciency of optoelectronic devices.
| Original language | English |
|---|---|
| Pages (from-to) | 5747-5753 |
| Number of pages | 7 |
| Journal | Journal of Nanoscience and Nanotechnology |
| Volume | 12 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 2012 Jul |
All Science Journal Classification (ASJC) codes
- Bioengineering
- Chemistry(all)
- Biomedical Engineering
- Materials Science(all)
- Condensed Matter Physics