Enhanced High-Temperature Electrical Resistivity of Aluminum Nitride Obtained by Engineering a Schottky Barrier at Grain Boundaries

Eunsil Lee, Jae Hwan Pee, Sung Min Lee, Jong Young Kim, Wooyoung Shim

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

An enhanced high-temperature electrical resistivity of AlN at high voltage was obtained by using MgO doping to modulate the Schottky barrier. Doped MgO was precipitated in an ∼100-nm-thick layer near grain boundaries, which reduced not only anionic carriers, but also the carrier mobility, due to the formation of defects (Mg′Al, O·N). According to an impedance analysis, the activation energy and the resistivity due to grain boundaries were increased by MgO doping, suggesting an elevated Schottky barrier. As a result, a remarkable high-voltage electrical resistivity, which is greater than 1010 Ω·cm at 550 °C/100 V, can be achieved, which is valuable for electrostatic chucking devices.

Original languageEnglish
Pages (from-to)673-679
Number of pages7
JournalJournal of the Korean Physical Society
Volume77
Issue number8
DOIs
Publication statusPublished - 2020 Oct 1

Bibliographical note

Publisher Copyright:
© 2020, The Korean Physical Society.

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy

Fingerprint

Dive into the research topics of 'Enhanced High-Temperature Electrical Resistivity of Aluminum Nitride Obtained by Engineering a Schottky Barrier at Grain Boundaries'. Together they form a unique fingerprint.

Cite this