We present an enhanced Hall voltage from the gate-controlled Hall device incorporating a micron-scaled InSb semiconductor cross junction and a single ferromagnetic element. Magnetic fringe field at an edge of the ferrogmanetic element gives rise to the Hall voltage, which shows hysteretic behavior upon magnetic-field sweep. The Hall effect is amplified by a factor of ~40% when a gate voltage of -25 V is applied. The increase is largely attributed to the reduction of carrier density affected by the gate confinement effect. The InSb Hall device controlled by gate voltage demonstrates a possible application for active nonvolatile memory cells and logic gate.
Bibliographical noteFunding Information:
This work was supported by KIST Vision21 Program. FIG. 1. A schematic diagram of a cross-section view of the gate-controlled InSb Hall device (a) and an optical micrograph of the fabricated device (b). FIG. 2. Conductance of the device as a function of gate voltage. FIG. 3. Hall resistance at a given gate voltage of V g = 0 and − 25 V as a function of the magnetic field applied in the direction of the ferromagnetic film axis. FIG. 4. Hall resistance at V g = 0 and − 25 V as a function of the magnetic field applied in the direction perpendicular to the device surface.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)