Enhanced fatigue property through the control of interfacial layer in Pt/PZT/Pt structure

Jun Kyu Yang; Woo Sik Kim; Hyung Ho Park

doi:10.1143/jjap.39.7000

Enhanced fatigue property through the control of interfacial layer in Pt/PZT/Pt structure

Jun Kyu Yang, Woo Sik Kim, Hyung Ho Park

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Ferroelectric Pb(Zr_xTi_1-x)O₃ PZT thin film capacitors with Pt(111)/SiO₂/Si substrate were fabricated by sol-gel method. Ultrathin PZT layer containing various contents of excess Pb was adopted as an interfacial layer to investigate the role of excess Pb on the formation of interfacial region between PZT film and Pt bottom electrode. An improvement of electrical properties was observed according to the content of excess Pb in interfacial PZT layer due to the inhibition of inter-diffusion at film-substrate interface as well as defect formation. The formation of Ti-rich PZT at the initial stage of anneal due to excess Pb was responsible for the excellent ferroelectric characteristic. This implied that the role of excess Pb in film-substrate interface was of significance to the long-term reliability.

Original language	English
Pages (from-to)	7000-7002
Number of pages	3
Journal	Japanese Journal of Applied Physics
Volume	39
Issue number	12 B
DOIs	https://doi.org/10.1143/jjap.39.7000
Publication status	Published - 2000 Dec

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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abstract = "Ferroelectric Pb(ZrxTi1-x)O3 PZT thin film capacitors with Pt(111)/SiO2/Si substrate were fabricated by sol-gel method. Ultrathin PZT layer containing various contents of excess Pb was adopted as an interfacial layer to investigate the role of excess Pb on the formation of interfacial region between PZT film and Pt bottom electrode. An improvement of electrical properties was observed according to the content of excess Pb in interfacial PZT layer due to the inhibition of inter-diffusion at film-substrate interface as well as defect formation. The formation of Ti-rich PZT at the initial stage of anneal due to excess Pb was responsible for the excellent ferroelectric characteristic. This implied that the role of excess Pb in film-substrate interface was of significance to the long-term reliability.",

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AU - Yang, Jun Kyu

AU - Kim, Woo Sik

AU - Park, Hyung Ho

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Y1 - 2000/12

N2 - Ferroelectric Pb(ZrxTi1-x)O3 PZT thin film capacitors with Pt(111)/SiO2/Si substrate were fabricated by sol-gel method. Ultrathin PZT layer containing various contents of excess Pb was adopted as an interfacial layer to investigate the role of excess Pb on the formation of interfacial region between PZT film and Pt bottom electrode. An improvement of electrical properties was observed according to the content of excess Pb in interfacial PZT layer due to the inhibition of inter-diffusion at film-substrate interface as well as defect formation. The formation of Ti-rich PZT at the initial stage of anneal due to excess Pb was responsible for the excellent ferroelectric characteristic. This implied that the role of excess Pb in film-substrate interface was of significance to the long-term reliability.

AB - Ferroelectric Pb(ZrxTi1-x)O3 PZT thin film capacitors with Pt(111)/SiO2/Si substrate were fabricated by sol-gel method. Ultrathin PZT layer containing various contents of excess Pb was adopted as an interfacial layer to investigate the role of excess Pb on the formation of interfacial region between PZT film and Pt bottom electrode. An improvement of electrical properties was observed according to the content of excess Pb in interfacial PZT layer due to the inhibition of inter-diffusion at film-substrate interface as well as defect formation. The formation of Ti-rich PZT at the initial stage of anneal due to excess Pb was responsible for the excellent ferroelectric characteristic. This implied that the role of excess Pb in film-substrate interface was of significance to the long-term reliability.

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Enhanced fatigue property through the control of interfacial layer in Pt/PZT/Pt structure

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