Enhanced electrical properties of thin-film transistor with self-passivated multistacked active layers

Deuk Jong Kim; You Seung Rim; Hyun Jae Kim

doi:10.1021/am4002259

Enhanced electrical properties of thin-film transistor with self-passivated multistacked active layers

Deuk Jong Kim, You Seung Rim, Hyun Jae Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

To enhance the solution-processed thin-film transistor (TFT) performance, we proposed a TFT with self-passivated multistacked active layers (SP-MSALs). This structure exhibited self-protection in the active layer as compared with the conventional TFT structure. The self-passivation layer prevented the leakage current path at the back-channel region, thus improving the field-effect mobility (μ_FET) and the positive bias stress (PBS) reliability. In addition, it was very stable in the exposed environment even for 150 h. As a result, the proposed SP-MSAL TFT caused the threshold voltage shift (ΔV_TH) under PBS to improve from 8.2 to 4.2 V as compared with the conventional MSAL TFTs.

Original language	English
Pages (from-to)	4190-4194
Number of pages	5
Journal	ACS Applied Materials and Interfaces
Volume	5
Issue number	10
DOIs	https://doi.org/10.1021/am4002259
Publication status	Published - 2013 May 22

All Science Journal Classification (ASJC) codes

Materials Science(all)

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10.1021/am4002259

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abstract = "To enhance the solution-processed thin-film transistor (TFT) performance, we proposed a TFT with self-passivated multistacked active layers (SP-MSALs). This structure exhibited self-protection in the active layer as compared with the conventional TFT structure. The self-passivation layer prevented the leakage current path at the back-channel region, thus improving the field-effect mobility (μFET) and the positive bias stress (PBS) reliability. In addition, it was very stable in the exposed environment even for 150 h. As a result, the proposed SP-MSAL TFT caused the threshold voltage shift (ΔVTH) under PBS to improve from 8.2 to 4.2 V as compared with the conventional MSAL TFTs.",

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AB - To enhance the solution-processed thin-film transistor (TFT) performance, we proposed a TFT with self-passivated multistacked active layers (SP-MSALs). This structure exhibited self-protection in the active layer as compared with the conventional TFT structure. The self-passivation layer prevented the leakage current path at the back-channel region, thus improving the field-effect mobility (μFET) and the positive bias stress (PBS) reliability. In addition, it was very stable in the exposed environment even for 150 h. As a result, the proposed SP-MSAL TFT caused the threshold voltage shift (ΔVTH) under PBS to improve from 8.2 to 4.2 V as compared with the conventional MSAL TFTs.

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Enhanced electrical properties of thin-film transistor with self-passivated multistacked active layers

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