Enhanced electrical and optical properties of singlelayered MoS2 by incorporation of aluminum

Hyung Jun Kim, Suk Yang, Hojoong Kim, Jin Young Moon, Kyung Park, Yun Jin Park, Jang Yeon Kwon

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)


Electrical and optical enhancements of single-layer semiconducting materials such as transition metal dichalcogenides have recently been studied to achieve sensitive properties via external treatments, such as the formation of organic/ inorganic protecting layers on field-effect transistors (FETs), thermal annealing, and nano-dot doping of sensors and detectors. Here, we propose a new analytical approach to electrical and optical enhancement through a passivation process using atomic layer deposition (ALD), and demonstrate a synthesized MoS2 monolayer incorporated with Al atoms in an Al2O3 passivation layer. The incorporated Al atoms in the MoS2 monolayer are clearly observed by spherical aberration-corrected scanning transmission electron microscopy (Cs-STEM) and TEM-energy-dispersive X-ray spectroscopy results. We demonstrate that the chemically incorporated FETs exhibit highly enhanced mobilities of approximately 3.7 cm2·V−1·s−1, forty times greater than that of as-synthesized MoS2, with a threefold improvement in the photoluminescence properties.

Original languageEnglish
Pages (from-to)731-740
Number of pages10
JournalNano Research
Issue number2
Publication statusPublished - 2018 Feb

Bibliographical note

Funding Information:
This research was supported by the MSIT (Ministry of Science and ICT), Korea, under the ICT ConsilienceCreative program (IITP-2017-2017-0-01015) supervised by the IITP (Institute for information & communications Technology Promotion).

Publisher Copyright:
© Tsinghua University Press and Springer-Verlag GmbH Germany 2017.

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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