Enhanced bipolar resistive switching of HfO2 with a Ti interlayer

Doo Sung Lee; Yong Hun Sung; In Gun Lee; Jong Gi Kim; Hyunchul Sohn; Dae Hong Ko

doi:10.1007/s00339-011-6312-5

Enhanced bipolar resistive switching of HfO₂ with a Ti interlayer

Doo Sung Lee, Yong Hun Sung, In Gun Lee, Jong Gi Kim, Hyunchul Sohn, Dae Hong Ko

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

The characteristics of resistive switching of TiN/HfO₂/Ti/ HfO₂/Pt/Ti stacks on SiO2/Si substrates were investigated and compared to TiN/HfO₂/Pt/Ti stacks in order to study Ti interlayer effects on resistive switching. The Ti interlayers were deposited in situ during the reactive sputtering of HfO₂ films. The current-voltage measurements showed that the Ti interlayers enhanced the memory window but reduced the endurance of SET/RESET operations. The energy filtered images by TEM showed asymmetric oxygen accumulation at the Ti/HfO_x interfaces. Subsequent heat treatment improved the endurance of SET/RESET operation of TiN/HfO₂/Ti/HfO₂/Pt/Ti stacks.

Original language	English
Pages (from-to)	997-1001
Number of pages	5
Journal	Applied Physics A: Materials Science and Processing
Volume	102
Issue number	4
DOIs	https://doi.org/10.1007/s00339-011-6312-5
Publication status	Published - 2011 Mar

All Science Journal Classification (ASJC) codes

Chemistry(all)
Materials Science(all)

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@article{b71e3e80ae61402fa898708ef74f4814,

title = "Enhanced bipolar resistive switching of HfO2 with a Ti interlayer",

abstract = "The characteristics of resistive switching of TiN/HfO2/Ti/ HfO2/Pt/Ti stacks on SiO2/Si substrates were investigated and compared to TiN/HfO2/Pt/Ti stacks in order to study Ti interlayer effects on resistive switching. The Ti interlayers were deposited in situ during the reactive sputtering of HfO2 films. The current-voltage measurements showed that the Ti interlayers enhanced the memory window but reduced the endurance of SET/RESET operations. The energy filtered images by TEM showed asymmetric oxygen accumulation at the Ti/HfOx interfaces. Subsequent heat treatment improved the endurance of SET/RESET operation of TiN/HfO2/Ti/HfO2/Pt/Ti stacks.",

author = "Lee, {Doo Sung} and Sung, {Yong Hun} and Lee, {In Gun} and Kim, {Jong Gi} and Hyunchul Sohn and Ko, {Dae Hong}",

year = "2011",

month = mar,

doi = "10.1007/s00339-011-6312-5",

language = "English",

volume = "102",

pages = "997--1001",

journal = "Applied Physics A: Materials Science and Processing",

issn = "0947-8396",

number = "4",

}

TY - JOUR

T1 - Enhanced bipolar resistive switching of HfO2 with a Ti interlayer

AU - Lee, Doo Sung

AU - Sung, Yong Hun

AU - Lee, In Gun

AU - Kim, Jong Gi

AU - Sohn, Hyunchul

AU - Ko, Dae Hong

PY - 2011/3

Y1 - 2011/3

N2 - The characteristics of resistive switching of TiN/HfO2/Ti/ HfO2/Pt/Ti stacks on SiO2/Si substrates were investigated and compared to TiN/HfO2/Pt/Ti stacks in order to study Ti interlayer effects on resistive switching. The Ti interlayers were deposited in situ during the reactive sputtering of HfO2 films. The current-voltage measurements showed that the Ti interlayers enhanced the memory window but reduced the endurance of SET/RESET operations. The energy filtered images by TEM showed asymmetric oxygen accumulation at the Ti/HfOx interfaces. Subsequent heat treatment improved the endurance of SET/RESET operation of TiN/HfO2/Ti/HfO2/Pt/Ti stacks.

AB - The characteristics of resistive switching of TiN/HfO2/Ti/ HfO2/Pt/Ti stacks on SiO2/Si substrates were investigated and compared to TiN/HfO2/Pt/Ti stacks in order to study Ti interlayer effects on resistive switching. The Ti interlayers were deposited in situ during the reactive sputtering of HfO2 films. The current-voltage measurements showed that the Ti interlayers enhanced the memory window but reduced the endurance of SET/RESET operations. The energy filtered images by TEM showed asymmetric oxygen accumulation at the Ti/HfOx interfaces. Subsequent heat treatment improved the endurance of SET/RESET operation of TiN/HfO2/Ti/HfO2/Pt/Ti stacks.

UR - http://www.scopus.com/inward/record.url?scp=79958072102&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79958072102&partnerID=8YFLogxK

U2 - 10.1007/s00339-011-6312-5

DO - 10.1007/s00339-011-6312-5

M3 - Article

AN - SCOPUS:79958072102

SN - 0947-8396

VL - 102

SP - 997

EP - 1001

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - 4

ER -

Enhanced bipolar resistive switching of HfO₂ with a Ti interlayer

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