Enhanced bipolar resistive switching of HfO2 with a Ti interlayer

Doo Sung Lee, Yong Hun Sung, In Gun Lee, Jong Gi Kim, Hyunchul Sohn, Dae Hong Ko

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21 Citations (Scopus)


The characteristics of resistive switching of TiN/HfO2/Ti/ HfO2/Pt/Ti stacks on SiO2/Si substrates were investigated and compared to TiN/HfO2/Pt/Ti stacks in order to study Ti interlayer effects on resistive switching. The Ti interlayers were deposited in situ during the reactive sputtering of HfO2 films. The current-voltage measurements showed that the Ti interlayers enhanced the memory window but reduced the endurance of SET/RESET operations. The energy filtered images by TEM showed asymmetric oxygen accumulation at the Ti/HfOx interfaces. Subsequent heat treatment improved the endurance of SET/RESET operation of TiN/HfO2/Ti/HfO2/Pt/Ti stacks.

Original languageEnglish
Pages (from-to)997-1001
Number of pages5
JournalApplied Physics A: Materials Science and Processing
Issue number4
Publication statusPublished - 2011 Mar

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)


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