Energy level alignments at the interface of N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB)/Ag-doped In                         2                         O                         3                          and NPB/Sn-doped In                         2                         O                         3

Kwanwook Jung; Soohyung Park; Younjoo Lee; Yungsik Youn; Hae In Shin; Han Ki Kim; Hyunbok Lee; Yeonjin Yi

doi:10.1016/j.apsusc.2016.06.157

Energy level alignments at the interface of N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB)/Ag-doped In ₂ O ₃ and NPB/Sn-doped In ₂ O ₃

Kwanwook Jung, Soohyung Park, Younjoo Lee, Yungsik Youn, Hae In Shin, Han Ki Kim, Hyunbok Lee, Yeonjin Yi

Department of Physics

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The electronic structures of Ag-doped In ₂ O ₃ (IAgO) and its energy level alignments with a N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB) hole transport layer (HTL) were investigated using in situ ultraviolet and X-ray photoelectron spectroscopies (UPS and XPS). As compared to the conventional Sn-doped In ₂ O ₃ (ITO), IAgO has less oxygen vacancies leading to a higher work function (WF). The lower hole injection barrier (Φ _h ) from IAgO to a NPB HTL is observed, which is attributed mainly to its higher WF and interface dipoles. The UPS measurements reveal that the Φ _h is 0.87 eV at NPB/IAgO while 1.11 eV is at NPB/ITO. Therefore, IAgO could be an alternative transparent anode in organic optoelectronics.

Original language	English
Pages (from-to)	625-630
Number of pages	6
Journal	Applied Surface Science
Volume	387
DOIs	https://doi.org/10.1016/j.apsusc.2016.06.157
Publication status	Published - 2016 Nov 30

Bibliographical note

Funding Information:
This work was supported by a research project of the National Research Foundation of Korea (2015R1C1A1A01055026, 2012M3A7B4049801) and Yonsei University Future-Leading Research Initiative of 2014 (2015-22-0123).

Publisher Copyright:
© 2016 Elsevier B.V.

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces, Coatings and Films
Surfaces and Interfaces

Access to Document

10.1016/j.apsusc.2016.06.157

Cite this

Jung, K., Park, S., Lee, Y., Youn, Y., Shin, H. I., Kim, H. K., Lee, H., & Yi, Y. (2016). Energy level alignments at the interface of N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB)/Ag-doped In ₂ O ₃ and NPB/Sn-doped In ₂ O ₃ Applied Surface Science, 387, 625-630. https://doi.org/10.1016/j.apsusc.2016.06.157

Jung, Kwanwook ; Park, Soohyung ; Lee, Younjoo et al. / Energy level alignments at the interface of N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB)/Ag-doped In ₂ O ₃ and NPB/Sn-doped In ₂ O ₃ In: Applied Surface Science. 2016 ; Vol. 387. pp. 625-630.

@article{58bdeb0a97354e35b43da4a99961893f,

title = " Energy level alignments at the interface of N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB)/Ag-doped In 2 O 3 and NPB/Sn-doped In 2 O 3 ",

abstract = " The electronic structures of Ag-doped In 2 O 3 (IAgO) and its energy level alignments with a N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB) hole transport layer (HTL) were investigated using in situ ultraviolet and X-ray photoelectron spectroscopies (UPS and XPS). As compared to the conventional Sn-doped In 2 O 3 (ITO), IAgO has less oxygen vacancies leading to a higher work function (WF). The lower hole injection barrier (Φ h ) from IAgO to a NPB HTL is observed, which is attributed mainly to its higher WF and interface dipoles. The UPS measurements reveal that the Φ h is 0.87 eV at NPB/IAgO while 1.11 eV is at NPB/ITO. Therefore, IAgO could be an alternative transparent anode in organic optoelectronics.",

author = "Kwanwook Jung and Soohyung Park and Younjoo Lee and Yungsik Youn and Shin, {Hae In} and Kim, {Han Ki} and Hyunbok Lee and Yeonjin Yi",

note = "Funding Information: This work was supported by a research project of the National Research Foundation of Korea (2015R1C1A1A01055026, 2012M3A7B4049801) and Yonsei University Future-Leading Research Initiative of 2014 (2015-22-0123). Publisher Copyright: {\textcopyright} 2016 Elsevier B.V.",

year = "2016",

month = nov,

day = "30",

doi = "10.1016/j.apsusc.2016.06.157",

language = "English",

volume = "387",

pages = "625--630",

journal = "Applied Surface Science",

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Jung, K, Park, S, Lee, Y, Youn, Y, Shin, HI, Kim, HK, Lee, H & Yi, Y 2016, ' Energy level alignments at the interface of N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB)/Ag-doped In ₂ O ₃ and NPB/Sn-doped In ₂ O ₃ ', Applied Surface Science, vol. 387, pp. 625-630. https://doi.org/10.1016/j.apsusc.2016.06.157

Energy level alignments at the interface of N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB)/Ag-doped In ₂ O ₃ and NPB/Sn-doped In ₂ O ₃ . / Jung, Kwanwook; Park, Soohyung; Lee, Younjoo et al.
In: Applied Surface Science, Vol. 387, 30.11.2016, p. 625-630.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Energy level alignments at the interface of N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB)/Ag-doped In 2 O 3 and NPB/Sn-doped In 2 O 3

AU - Jung, Kwanwook

AU - Park, Soohyung

AU - Lee, Younjoo

AU - Youn, Yungsik

AU - Shin, Hae In

AU - Kim, Han Ki

AU - Lee, Hyunbok

AU - Yi, Yeonjin

N1 - Funding Information: This work was supported by a research project of the National Research Foundation of Korea (2015R1C1A1A01055026, 2012M3A7B4049801) and Yonsei University Future-Leading Research Initiative of 2014 (2015-22-0123). Publisher Copyright: © 2016 Elsevier B.V.

PY - 2016/11/30

Y1 - 2016/11/30

N2 - The electronic structures of Ag-doped In 2 O 3 (IAgO) and its energy level alignments with a N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB) hole transport layer (HTL) were investigated using in situ ultraviolet and X-ray photoelectron spectroscopies (UPS and XPS). As compared to the conventional Sn-doped In 2 O 3 (ITO), IAgO has less oxygen vacancies leading to a higher work function (WF). The lower hole injection barrier (Φ h ) from IAgO to a NPB HTL is observed, which is attributed mainly to its higher WF and interface dipoles. The UPS measurements reveal that the Φ h is 0.87 eV at NPB/IAgO while 1.11 eV is at NPB/ITO. Therefore, IAgO could be an alternative transparent anode in organic optoelectronics.

AB - The electronic structures of Ag-doped In 2 O 3 (IAgO) and its energy level alignments with a N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB) hole transport layer (HTL) were investigated using in situ ultraviolet and X-ray photoelectron spectroscopies (UPS and XPS). As compared to the conventional Sn-doped In 2 O 3 (ITO), IAgO has less oxygen vacancies leading to a higher work function (WF). The lower hole injection barrier (Φ h ) from IAgO to a NPB HTL is observed, which is attributed mainly to its higher WF and interface dipoles. The UPS measurements reveal that the Φ h is 0.87 eV at NPB/IAgO while 1.11 eV is at NPB/ITO. Therefore, IAgO could be an alternative transparent anode in organic optoelectronics.

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DO - 10.1016/j.apsusc.2016.06.157

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Jung K, Park S, Lee Y, Youn Y, Shin HI, Kim HK et al. Energy level alignments at the interface of N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB)/Ag-doped In ₂ O ₃ and NPB/Sn-doped In ₂ O ₃ Applied Surface Science. 2016 Nov 30;387:625-630. doi: 10.1016/j.apsusc.2016.06.157