Energy level alignment between C                         60                          and Al using ultraviolet photoelectron spectroscopy

J. H. Seo; S. J. Kang; C. Y. Kim; S. W. Cho; K. H. Yoo; C. N. Whang

doi:10.1016/j.apsusc.2005.12.095

Energy level alignment between C ₆₀ and Al using ultraviolet photoelectron spectroscopy

J. H. Seo, S. J. Kang, C. Y. Kim, S. W. Cho, K. H. Yoo, C. N. Whang

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

The energy level alignment between C ₆₀ and Al has been investigated by using ultraviolet photoelectron spectroscopy. To obtain the interfacial electronic structure between C ₆₀ and Al, C ₆₀ was deposited on a clean Al substrate in a stepwise manner. The valence-band spectra were measured immediately after each step of C ₆₀ deposition without breaking the vacuum. The measured onset of the highest occupied molecular orbital energy level was located at 1.59 eV from the Fermi level of Al. The vacuum level was shifted 0.68 eV toward lower binding energy with additional C ₆₀ layers. The observed vacuum level shift means that the interface dipole exists at the interface between C ₆₀ and Al. The barrier height of electron injection from Al to C ₆₀ is 0.11 eV, which is smaller value than that of hole injection.

Original language	English
Pages (from-to)	8015-8017
Number of pages	3
Journal	Applied Surface Science
Volume	252
Issue number	22
DOIs	https://doi.org/10.1016/j.apsusc.2005.12.095
Publication status	Published - 2006 Sept 15

Bibliographical note

Funding Information:
This work was supported by Brain Korea 21 (BK21) project of Korea Research Foundation (KRF), and Korea Science and Engineering Foundation (KOSEF) through National Core Research Center for Nanomedical Technology.

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1016/j.apsusc.2005.12.095

Cite this

@article{d36fabbd9896424d815b675e3571baa2,

title = " Energy level alignment between C 60 and Al using ultraviolet photoelectron spectroscopy ",

abstract = " The energy level alignment between C 60 and Al has been investigated by using ultraviolet photoelectron spectroscopy. To obtain the interfacial electronic structure between C 60 and Al, C 60 was deposited on a clean Al substrate in a stepwise manner. The valence-band spectra were measured immediately after each step of C 60 deposition without breaking the vacuum. The measured onset of the highest occupied molecular orbital energy level was located at 1.59 eV from the Fermi level of Al. The vacuum level was shifted 0.68 eV toward lower binding energy with additional C 60 layers. The observed vacuum level shift means that the interface dipole exists at the interface between C 60 and Al. The barrier height of electron injection from Al to C 60 is 0.11 eV, which is smaller value than that of hole injection.",

author = "Seo, {J. H.} and Kang, {S. J.} and Kim, {C. Y.} and Cho, {S. W.} and Yoo, {K. H.} and Whang, {C. N.}",

note = "Funding Information: This work was supported by Brain Korea 21 (BK21) project of Korea Research Foundation (KRF), and Korea Science and Engineering Foundation (KOSEF) through National Core Research Center for Nanomedical Technology.",

year = "2006",

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doi = "10.1016/j.apsusc.2005.12.095",

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T1 - Energy level alignment between C 60 and Al using ultraviolet photoelectron spectroscopy

AU - Seo, J. H.

AU - Kang, S. J.

AU - Kim, C. Y.

AU - Cho, S. W.

AU - Yoo, K. H.

AU - Whang, C. N.

N1 - Funding Information: This work was supported by Brain Korea 21 (BK21) project of Korea Research Foundation (KRF), and Korea Science and Engineering Foundation (KOSEF) through National Core Research Center for Nanomedical Technology.

PY - 2006/9/15

Y1 - 2006/9/15

N2 - The energy level alignment between C 60 and Al has been investigated by using ultraviolet photoelectron spectroscopy. To obtain the interfacial electronic structure between C 60 and Al, C 60 was deposited on a clean Al substrate in a stepwise manner. The valence-band spectra were measured immediately after each step of C 60 deposition without breaking the vacuum. The measured onset of the highest occupied molecular orbital energy level was located at 1.59 eV from the Fermi level of Al. The vacuum level was shifted 0.68 eV toward lower binding energy with additional C 60 layers. The observed vacuum level shift means that the interface dipole exists at the interface between C 60 and Al. The barrier height of electron injection from Al to C 60 is 0.11 eV, which is smaller value than that of hole injection.

AB - The energy level alignment between C 60 and Al has been investigated by using ultraviolet photoelectron spectroscopy. To obtain the interfacial electronic structure between C 60 and Al, C 60 was deposited on a clean Al substrate in a stepwise manner. The valence-band spectra were measured immediately after each step of C 60 deposition without breaking the vacuum. The measured onset of the highest occupied molecular orbital energy level was located at 1.59 eV from the Fermi level of Al. The vacuum level was shifted 0.68 eV toward lower binding energy with additional C 60 layers. The observed vacuum level shift means that the interface dipole exists at the interface between C 60 and Al. The barrier height of electron injection from Al to C 60 is 0.11 eV, which is smaller value than that of hole injection.

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