Energy barrier reduction and exciton confinement using an intermediate blocking layer in organic light-emitting diodes

Jin Woo Park; Jin Young Oh; Hyeon Seok Hwang; Min Kyoung Jo; Sang Hun Choi; Kie Moon Song; Se Jong Lee; Hong Koo Baik

doi:10.1143/JJAP.49.110204

Energy barrier reduction and exciton confinement using an intermediate blocking layer in organic light-emitting diodes

Jin Woo Park, Jin Young Oh, Hyeon Seok Hwang, Min Kyoung Jo, Sang Hun Choi, Kie Moon Song, Se Jong Lee, Hong Koo Baik

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The intermediate blocking layer (IBL) was investigated for the development of highly efficient and bright organic light-emitting diodes (OLEDs). The insertion of an IBL between a hole transport layer and an emitting layer (EML) has resulted in the development of highly efficient and bright OLEDs. The quantum efficiency and electrical durability at high voltage were highly dependent on the thickness of the IBL. The maximum external quantum efficiency of the devices with a 1.5-nm-thick IBL was increased by 28% compared with the reference. The enhanced performance of the OLEDs appears to be due to the improvement of carrier balance and exciton confinement.

Original language	English
Article number	110204
Journal	Japanese journal of applied physics
Volume	49
Issue number	11
DOIs	https://doi.org/10.1143/JJAP.49.110204
Publication status	Published - 2010 Nov

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/JJAP.49.110204

Cite this

@article{2c12adb6a4fe4229a680edba9e1ebce0,

title = "Energy barrier reduction and exciton confinement using an intermediate blocking layer in organic light-emitting diodes",

abstract = "The intermediate blocking layer (IBL) was investigated for the development of highly efficient and bright organic light-emitting diodes (OLEDs). The insertion of an IBL between a hole transport layer and an emitting layer (EML) has resulted in the development of highly efficient and bright OLEDs. The quantum efficiency and electrical durability at high voltage were highly dependent on the thickness of the IBL. The maximum external quantum efficiency of the devices with a 1.5-nm-thick IBL was increased by 28% compared with the reference. The enhanced performance of the OLEDs appears to be due to the improvement of carrier balance and exciton confinement.",

author = "Park, {Jin Woo} and Oh, {Jin Young} and Hwang, {Hyeon Seok} and Jo, {Min Kyoung} and Choi, {Sang Hun} and Song, {Kie Moon} and Lee, {Se Jong} and Baik, {Hong Koo}",

year = "2010",

month = nov,

doi = "10.1143/JJAP.49.110204",

language = "English",

volume = "49",

journal = "Japanese journal of applied physics",

issn = "0021-4922",

number = "11",

}

TY - JOUR

T1 - Energy barrier reduction and exciton confinement using an intermediate blocking layer in organic light-emitting diodes

AU - Park, Jin Woo

AU - Oh, Jin Young

AU - Hwang, Hyeon Seok

AU - Jo, Min Kyoung

AU - Choi, Sang Hun

AU - Song, Kie Moon

AU - Lee, Se Jong

AU - Baik, Hong Koo

PY - 2010/11

Y1 - 2010/11

N2 - The intermediate blocking layer (IBL) was investigated for the development of highly efficient and bright organic light-emitting diodes (OLEDs). The insertion of an IBL between a hole transport layer and an emitting layer (EML) has resulted in the development of highly efficient and bright OLEDs. The quantum efficiency and electrical durability at high voltage were highly dependent on the thickness of the IBL. The maximum external quantum efficiency of the devices with a 1.5-nm-thick IBL was increased by 28% compared with the reference. The enhanced performance of the OLEDs appears to be due to the improvement of carrier balance and exciton confinement.

AB - The intermediate blocking layer (IBL) was investigated for the development of highly efficient and bright organic light-emitting diodes (OLEDs). The insertion of an IBL between a hole transport layer and an emitting layer (EML) has resulted in the development of highly efficient and bright OLEDs. The quantum efficiency and electrical durability at high voltage were highly dependent on the thickness of the IBL. The maximum external quantum efficiency of the devices with a 1.5-nm-thick IBL was increased by 28% compared with the reference. The enhanced performance of the OLEDs appears to be due to the improvement of carrier balance and exciton confinement.

UR - http://www.scopus.com/inward/record.url?scp=79551635903&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79551635903&partnerID=8YFLogxK

U2 - 10.1143/JJAP.49.110204

DO - 10.1143/JJAP.49.110204

M3 - Article

AN - SCOPUS:79551635903

SN - 0021-4922

VL - 49

JO - Japanese journal of applied physics

JF - Japanese journal of applied physics

IS - 11

M1 - 110204

ER -

Energy barrier reduction and exciton confinement using an intermediate blocking layer in organic light-emitting diodes

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this