Energy band gap and optical transition of metal ion modified double crossover dna lattices

Sreekantha Reddy Dugasani, Taewoo Ha, Bramaramba Gnapareddy, Kyujin Choi, Junwye Lee, Byeonghoon Kim, Jae Hoon Kim, Sung Ha Park

Research output: Contribution to journalArticlepeer-review

40 Citations (Scopus)


We report on the energy band gap and optical transition of a series of divalent metal ion (Cu2+, Ni2+, Zn2+, and Co2+) modified DNA (M-DNA) double crossover (DX) lattices fabricated on fused silica by the substrate-assisted growth (SAG) method. We demonstrate how the degree of coverage of the DX lattices is influenced by the DX monomer concentration and also analyze the band gaps of the M-DNA lattices. The energy band gap of the M-DNA, between the lowest unoccupied molecular orbital (LUMO) and the highest occupied molecular orbital (HOMO), ranges from 4.67 to 4.98 eV as judged by optical transitions. Relative to the band gap of a pristine DNA molecule (4.69 eV), the band gap of the M-DNA lattices increases with metal ion doping up to a critical concentration and then decreases with further doping. Interestingly, except for the case of Ni2+, the onset of the second absorption band shifts to a lower energy until a critical concentration and then shifts to a higher energy with further increasing the metal ion concentration, which is consistent with the evolution of electrical transport characteristics. Our results show that controllable metal ion doping is an effective method to tune the band gap energy of DNA-based nanostructures.

Original languageEnglish
Pages (from-to)17599-17605
Number of pages7
JournalACS Applied Materials and Interfaces
Issue number20
Publication statusPublished - 2014 Oct 22

Bibliographical note

Publisher Copyright:
© 2014 American Chemical Society.

All Science Journal Classification (ASJC) codes

  • Materials Science(all)


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