Electronic structure of CuCrO2 thin films grown on Al 2O3(001) by oxygen plasma assisted molecular beam epitaxy

D. Shin; J. S. Foord; R. G. Egdell; A. Walsh

doi:10.1063/1.4768726

Electronic structure of CuCrO₂ thin films grown on Al ₂O₃(001) by oxygen plasma assisted molecular beam epitaxy

D. Shin, J. S. Foord, R. G. Egdell, A. Walsh

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

44 Citations (Scopus)

Abstract

Thin films of CuCrO₂ have been grown on Al₂O ₃(001) substrates by oxygen plasma assisted molecular beam epitaxy. With a substrate temperature of 700°C or 750°C, the films showed an unanticipated (015) orientation but at a higher substrate temperature of 800°C the expected basal (001) orientation predominates. The optical absorption spectrum of CuCrO₂ shows a direct allowed absorption onset at 3.18eV together with a weak peak at 2.0eV which is suppressed by Sn doping. This suggests that the low energy peak should be attributed to 3d→3d excitations associated with Cu²⁺ defect states rather than excitations localised on Cr³⁺. Valence band X-ray photoemission spectra of (001) and (015) oriented CuCrO₂ are compared with those obtained from polycrystalline samples.

Original language	English
Article number	113718
Journal	Journal of Applied Physics
Volume	112
Issue number	11
DOIs	https://doi.org/10.1063/1.4768726
Publication status	Published - 2012 Dec 1

Bibliographical note

Funding Information:
The Oxford MBE programme was supported by EPSRC Grant GR/S94148.

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

Access to Document

10.1063/1.4768726

Cite this

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title = "Electronic structure of CuCrO2 thin films grown on Al 2O3(001) by oxygen plasma assisted molecular beam epitaxy",

abstract = "Thin films of CuCrO2 have been grown on Al2O 3(001) substrates by oxygen plasma assisted molecular beam epitaxy. With a substrate temperature of 700°C or 750°C, the films showed an unanticipated (015) orientation but at a higher substrate temperature of 800°C the expected basal (001) orientation predominates. The optical absorption spectrum of CuCrO2 shows a direct allowed absorption onset at 3.18eV together with a weak peak at 2.0eV which is suppressed by Sn doping. This suggests that the low energy peak should be attributed to 3d→3d excitations associated with Cu2+ defect states rather than excitations localised on Cr3+. Valence band X-ray photoemission spectra of (001) and (015) oriented CuCrO2 are compared with those obtained from polycrystalline samples.",

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AU - Shin, D.

AU - Foord, J. S.

AU - Egdell, R. G.

AU - Walsh, A.

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AB - Thin films of CuCrO2 have been grown on Al2O 3(001) substrates by oxygen plasma assisted molecular beam epitaxy. With a substrate temperature of 700°C or 750°C, the films showed an unanticipated (015) orientation but at a higher substrate temperature of 800°C the expected basal (001) orientation predominates. The optical absorption spectrum of CuCrO2 shows a direct allowed absorption onset at 3.18eV together with a weak peak at 2.0eV which is suppressed by Sn doping. This suggests that the low energy peak should be attributed to 3d→3d excitations associated with Cu2+ defect states rather than excitations localised on Cr3+. Valence band X-ray photoemission spectra of (001) and (015) oriented CuCrO2 are compared with those obtained from polycrystalline samples.

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