Electronic structure of C60/phthalocyanine/ITO interfaces studied using soft X-ray spectroscopies

S. W. Cho, L. F.J. Piper, A. Demasi, A. R.H. Preston, K. E. Smith, K. V. Chauhan, P. Sullivan, R. A. Hatton, T. S. Jones

Research output: Contribution to journalArticlepeer-review

96 Citations (Scopus)

Abstract

The interface electronic structure of a bilayer heterojunction of C 60 and three different phthalocyanines grown on indium tin oxide (ITO) has been studied using synchrotron radiation-excited photoelectron spectroscopy. The energy difference between the highest occupied molecular orbital level of the phthalocyanine (donor) layer and the lowest unoccupied molecular orbital level of the C60 (acceptor) layer (E HOMOD - ELUMOA) was determined. The EHOMOD - ELUMOA of a heterojunction with boron subphthalocyanine chloride (SubPc) was found to be much larger than those of copper phthalocyanine (CuPc) and chloro-aluminum phthalocyanine (ClAlPc). This observation is discussed in terms of the difference of the ionization energy of each donor material. Additionally, we have studied the molecular orientation of the phthalocyanine films on ITO using angle-dependent X-ray absorption spectroscopy. We found that the SubPc films showed significant disorder compared to the CuPc and ClAlPc films and also found that E HOMOD - ELUMOA varied with the orientation of the ClAlPc molecules relative to the ITO substrate. This orientation could be controlled by varying the ClAlPc deposition rate.

Original languageEnglish
Pages (from-to)1928-1933
Number of pages6
JournalJournal of Physical Chemistry C
Volume114
Issue number4
DOIs
Publication statusPublished - 2010 Feb 4

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films

Fingerprint

Dive into the research topics of 'Electronic structure of C60/phthalocyanine/ITO interfaces studied using soft X-ray spectroscopies'. Together they form a unique fingerprint.

Cite this