Electronic properties of transition-metal dichalcogenides

Agnieszka Kuc, Thomas Heine, Andras Kis

Research output: Contribution to journalArticlepeer-review

68 Citations (Scopus)


Graphene is not the only prominent example of two-dimensional (2D) materials. Due to their interesting combination of high mechanical strength and optical transparency, direct bandgap and atomic scale thickness transition-metal dichalcogenides (TMDCs) are an example of other materials that are now vying for the attention of the materials research community. In this article, the current state of quantum-theoretical calculations of the electronic and mechanical properties of semiconducting TMDC materials are presented. In particular, the intriguing interplay between external parameters (electric field, strain) and band structure, as well as the basic properties of heterostructures formed by vertical stacking of different 2D TMDCs are reviewed. Electrical measurements of MoS2, WS2, and WSe2 and their heterostructures, starting from simple field-effect transistors to more demanding logic circuits, high-frequency transistors, and memory devices, are also presented.

Original languageEnglish
Pages (from-to)577-584
Number of pages8
JournalMRS Bulletin
Issue number7
Publication statusPublished - 2015

Bibliographical note

Funding Information:
This work was fi nancially supported by the European Research Council (grants no. 240076 & no. 256962), Marie Curie ITN network "MoWSeS" (grant no. 317451), the Swiss National Science Foundation (grants no. 132102 and 138237), Swiss SNF Sinergia Grant no. 147607, and Deutsche Forschungsgemeinschaft (HE 3543/19-1).

Publisher Copyright:
Copyright © 2015 Materials Research Society.

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Physical and Theoretical Chemistry


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