Electron trap level in a GaN nanorod p-n junction grown by molecular-beam epitaxy

Y. S. Park; C. M. Park; C. J. Park; H. Y. Cho; Seung Joo Lee; T. W. Kang; S. H. Lee; Jae Eung Oh; Kyung Hwa Yoo; Min Soo Son

doi:10.1063/1.2203735

Electron trap level in a GaN nanorod p-n junction grown by molecular-beam epitaxy

Y. S. Park, C. M. Park, C. J. Park, H. Y. Cho, Seung Joo Lee, T. W. Kang, S. H. Lee, Jae Eung Oh, Kyung Hwa Yoo, Min Soo Son

Department of Physics

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

We have studied the electrical properties of a GaN nanorod p-n junction diode by deep level transient spectroscopy measurements. The p-n junction nanorods were patterned on a Si O2 substrate by using e-beam lithography. In order to confirm the formation of p-n junction, cathodoluminescence and current-voltage measurements, as a function of temperature, were made. The current-voltage curve exhibits strong temperature dependence, suggesting that thermionic emission over a barrier dominates. This barrier most likely corresponds to emission from a deep level in the band. The deep level appears to be an electron trap at Ec-0.40 eV below the conduction band with a capture cross section of 2.22×10 cm2 near the depletion region of the p-n junction.

Original language	English
Article number	192104
Journal	Applied Physics Letters
Volume	88
Issue number	19
DOIs	https://doi.org/10.1063/1.2203735
Publication status	Published - 2006

Bibliographical note

Funding Information:
This work was supported by the Quantum Functional Semiconductor Research Center at Dongguk University and the Tera-Bit Nano Devices Program as a part of Frontier-21 Project sponsored by Korea Science and Engineering Foundation. The authors would like to acknowledge the partial support of the AOARD, USA.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2203735

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title = "Electron trap level in a GaN nanorod p-n junction grown by molecular-beam epitaxy",

abstract = "We have studied the electrical properties of a GaN nanorod p-n junction diode by deep level transient spectroscopy measurements. The p-n junction nanorods were patterned on a Si O2 substrate by using e-beam lithography. In order to confirm the formation of p-n junction, cathodoluminescence and current-voltage measurements, as a function of temperature, were made. The current-voltage curve exhibits strong temperature dependence, suggesting that thermionic emission over a barrier dominates. This barrier most likely corresponds to emission from a deep level in the band. The deep level appears to be an electron trap at Ec-0.40 eV below the conduction band with a capture cross section of 2.22×10 cm2 near the depletion region of the p-n junction.",

author = "Park, {Y. S.} and Park, {C. M.} and Park, {C. J.} and Cho, {H. Y.} and Lee, {Seung Joo} and Kang, {T. W.} and Lee, {S. H.} and Oh, {Jae Eung} and Yoo, {Kyung Hwa} and Son, {Min Soo}",

note = "Funding Information: This work was supported by the Quantum Functional Semiconductor Research Center at Dongguk University and the Tera-Bit Nano Devices Program as a part of Frontier-21 Project sponsored by Korea Science and Engineering Foundation. The authors would like to acknowledge the partial support of the AOARD, USA.",

year = "2006",

doi = "10.1063/1.2203735",

language = "English",

volume = "88",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Electron trap level in a GaN nanorod p-n junction grown by molecular-beam epitaxy

AU - Park, Y. S.

AU - Park, C. M.

AU - Park, C. J.

AU - Cho, H. Y.

AU - Lee, Seung Joo

AU - Kang, T. W.

AU - Lee, S. H.

AU - Oh, Jae Eung

AU - Yoo, Kyung Hwa

AU - Son, Min Soo

N1 - Funding Information: This work was supported by the Quantum Functional Semiconductor Research Center at Dongguk University and the Tera-Bit Nano Devices Program as a part of Frontier-21 Project sponsored by Korea Science and Engineering Foundation. The authors would like to acknowledge the partial support of the AOARD, USA.

PY - 2006

Y1 - 2006

N2 - We have studied the electrical properties of a GaN nanorod p-n junction diode by deep level transient spectroscopy measurements. The p-n junction nanorods were patterned on a Si O2 substrate by using e-beam lithography. In order to confirm the formation of p-n junction, cathodoluminescence and current-voltage measurements, as a function of temperature, were made. The current-voltage curve exhibits strong temperature dependence, suggesting that thermionic emission over a barrier dominates. This barrier most likely corresponds to emission from a deep level in the band. The deep level appears to be an electron trap at Ec-0.40 eV below the conduction band with a capture cross section of 2.22×10 cm2 near the depletion region of the p-n junction.

AB - We have studied the electrical properties of a GaN nanorod p-n junction diode by deep level transient spectroscopy measurements. The p-n junction nanorods were patterned on a Si O2 substrate by using e-beam lithography. In order to confirm the formation of p-n junction, cathodoluminescence and current-voltage measurements, as a function of temperature, were made. The current-voltage curve exhibits strong temperature dependence, suggesting that thermionic emission over a barrier dominates. This barrier most likely corresponds to emission from a deep level in the band. The deep level appears to be an electron trap at Ec-0.40 eV below the conduction band with a capture cross section of 2.22×10 cm2 near the depletion region of the p-n junction.

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DO - 10.1063/1.2203735

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VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

M1 - 192104

ER -

Electron trap level in a GaN nanorod p-n junction grown by molecular-beam epitaxy

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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