Electron spin relaxations of phosphorus donors in bulk silicon under large electric field

Daniel K. Park, Sejun Park, Hyejung Jee, Soonchil Lee

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Modulation of donor electron wavefunction via electric fields is vital to quantum computing architectures based on donor spins in silicon. For practical and scalable applications, the donor-based qubits must retain sufficiently long coherence times in any realistic experimental conditions. Here, we present pulsed electron spin resonance studies on the longitudinal (T 1 ) and transverse (T 2 ) relaxation times of phosphorus donors in bulk silicon with various electric field strengths up to near avalanche breakdown in high magnetic fields of about 1.2 T and low temperatures of about 8 K. We find that the T 1 relaxation time is significantly reduced under large electric fields due to electric current, and T 2 is affected as the T 1 process can dominate decoherence. Furthermore, we show that the magnetoresistance effect in silicon can be exploited as a means to combat the reduction in the coherence times. While qubit coherence times must be much longer than quantum gate times, electrically accelerated T 1 can be found useful when qubit state initialization relies on thermal equilibration.

Original languageEnglish
Article number2951
JournalScientific reports
Volume9
Issue number1
DOIs
Publication statusPublished - 2019 Dec 1

Bibliographical note

Publisher Copyright:
© 2019, The Author(s).

All Science Journal Classification (ASJC) codes

  • General

Fingerprint

Dive into the research topics of 'Electron spin relaxations of phosphorus donors in bulk silicon under large electric field'. Together they form a unique fingerprint.

Cite this