Electron hopping rate measurements in ITO junctions: Charge diffusion in a layer-by-layer deposited ruthenium(II)-bis(benzimidazolyl)pyridine-phosphonate- TiO2 film

Charles Y. Cummings; Jay D. Wadhawan; Takuya Nakabayashi; Masa Aki Haga; Liza Rassaei; Sara E.C. Dale; Simon Bending; Martin Pumera; Stephen C. Parker; Frank Marken

doi:10.1016/j.jelechem.2011.04.010

Electron hopping rate measurements in ITO junctions: Charge diffusion in a layer-by-layer deposited ruthenium(II)-bis(benzimidazolyl)pyridine-phosphonate- TiO₂ film

Charles Y. Cummings, Jay D. Wadhawan, Takuya Nakabayashi, Masa Aki Haga, Liza Rassaei, Sara E.C. Dale, Simon Bending, Martin Pumera, Stephen C. Parker, Frank Marken

Department of Chemical and Biomolecular Engineering

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

Focused ion beam (FIB) machining allowed a sub-micron trench to be cut through tin-doped indium oxide (ITO) film on glass to give a generator - collector junction electrode with narrow gap (ca. 600 nm). A layer-by-layer deposited film composed of a dinuclear ruthenium(II)-bis(benzimidazolyl) pyridine-phosphonate (as the negative component) and nanoparticulate TiO ₂ (ca. 6 nm diameter, as the positive component) was formed and investigated first on simple ITO electrodes and then on ITO junction electrodes. The charge transport within this film due to Ru(II/III) redox switching (electron hopping) was investigated and an apparent diffusion coefficient of ca. D_app = 2 (± 1) × 10^-15 m² s ^-1 was observed with minimal contributions from intra-molecular Ru-Ru interactions. The benefits of FIB-cut ITO junctions as a tool in determining charge hopping rates are highlighted.

Original language	English
Pages (from-to)	196-201
Number of pages	6
Journal	Journal of Electroanalytical Chemistry
Volume	657
Issue number	1-2
DOIs	https://doi.org/10.1016/j.jelechem.2011.04.010
Publication status	Published - 2011 Jul 1

Bibliographical note

Funding Information:
Dr. Suguo Huo and Dr. Paul Warburton are gratefully acknowledged for allowing access to the EPSRC FIB service at UCL. C.Y.C. thanks the EPSRC for a studentship. M.H. acknowledges the financial support received from the Ministry of Education, Culture, Sports, Science and Technology for a Grant-in-Aid for Priority Area “Coordination Programming” (No. 21108003) and also for Scientific Research (No. 21350082).

All Science Journal Classification (ASJC) codes

Analytical Chemistry
Chemical Engineering(all)
Electrochemistry

Access to Document

10.1016/j.jelechem.2011.04.010

Cite this

Cummings, C. Y., Wadhawan, J. D., Nakabayashi, T., Haga, M. A., Rassaei, L., Dale, S. E. C., Bending, S., Pumera, M., Parker, S. C., & Marken, F. (2011). Electron hopping rate measurements in ITO junctions: Charge diffusion in a layer-by-layer deposited ruthenium(II)-bis(benzimidazolyl)pyridine-phosphonate- TiO₂ film. Journal of Electroanalytical Chemistry, 657(1-2), 196-201. https://doi.org/10.1016/j.jelechem.2011.04.010

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title = "Electron hopping rate measurements in ITO junctions: Charge diffusion in a layer-by-layer deposited ruthenium(II)-bis(benzimidazolyl)pyridine-phosphonate- TiO2 film",

abstract = "Focused ion beam (FIB) machining allowed a sub-micron trench to be cut through tin-doped indium oxide (ITO) film on glass to give a generator - collector junction electrode with narrow gap (ca. 600 nm). A layer-by-layer deposited film composed of a dinuclear ruthenium(II)-bis(benzimidazolyl) pyridine-phosphonate (as the negative component) and nanoparticulate TiO 2 (ca. 6 nm diameter, as the positive component) was formed and investigated first on simple ITO electrodes and then on ITO junction electrodes. The charge transport within this film due to Ru(II/III) redox switching (electron hopping) was investigated and an apparent diffusion coefficient of ca. Dapp = 2 (± 1) × 10-15 m2 s -1 was observed with minimal contributions from intra-molecular Ru-Ru interactions. The benefits of FIB-cut ITO junctions as a tool in determining charge hopping rates are highlighted.",

author = "Cummings, {Charles Y.} and Wadhawan, {Jay D.} and Takuya Nakabayashi and Haga, {Masa Aki} and Liza Rassaei and Dale, {Sara E.C.} and Simon Bending and Martin Pumera and Parker, {Stephen C.} and Frank Marken",

note = "Funding Information: Dr. Suguo Huo and Dr. Paul Warburton are gratefully acknowledged for allowing access to the EPSRC FIB service at UCL. C.Y.C. thanks the EPSRC for a studentship. M.H. acknowledges the financial support received from the Ministry of Education, Culture, Sports, Science and Technology for a Grant-in-Aid for Priority Area “Coordination Programming” (No. 21108003) and also for Scientific Research (No. 21350082). ",

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Cummings, CY, Wadhawan, JD, Nakabayashi, T, Haga, MA, Rassaei, L, Dale, SEC, Bending, S, Pumera, M, Parker, SC & Marken, F 2011, 'Electron hopping rate measurements in ITO junctions: Charge diffusion in a layer-by-layer deposited ruthenium(II)-bis(benzimidazolyl)pyridine-phosphonate- TiO₂ film', Journal of Electroanalytical Chemistry, vol. 657, no. 1-2, pp. 196-201. https://doi.org/10.1016/j.jelechem.2011.04.010

Electron hopping rate measurements in ITO junctions: Charge diffusion in a layer-by-layer deposited ruthenium(II)-bis(benzimidazolyl)pyridine-phosphonate- TiO₂ film. / Cummings, Charles Y.; Wadhawan, Jay D.; Nakabayashi, Takuya et al.
In: Journal of Electroanalytical Chemistry, Vol. 657, No. 1-2, 01.07.2011, p. 196-201.

Research output: Contribution to journal › Article › peer-review

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T1 - Electron hopping rate measurements in ITO junctions

T2 - Charge diffusion in a layer-by-layer deposited ruthenium(II)-bis(benzimidazolyl)pyridine-phosphonate- TiO2 film

AU - Cummings, Charles Y.

AU - Wadhawan, Jay D.

AU - Nakabayashi, Takuya

AU - Haga, Masa Aki

AU - Rassaei, Liza

AU - Dale, Sara E.C.

AU - Bending, Simon

AU - Pumera, Martin

AU - Parker, Stephen C.

AU - Marken, Frank

N1 - Funding Information: Dr. Suguo Huo and Dr. Paul Warburton are gratefully acknowledged for allowing access to the EPSRC FIB service at UCL. C.Y.C. thanks the EPSRC for a studentship. M.H. acknowledges the financial support received from the Ministry of Education, Culture, Sports, Science and Technology for a Grant-in-Aid for Priority Area “Coordination Programming” (No. 21108003) and also for Scientific Research (No. 21350082).

PY - 2011/7/1

Y1 - 2011/7/1

N2 - Focused ion beam (FIB) machining allowed a sub-micron trench to be cut through tin-doped indium oxide (ITO) film on glass to give a generator - collector junction electrode with narrow gap (ca. 600 nm). A layer-by-layer deposited film composed of a dinuclear ruthenium(II)-bis(benzimidazolyl) pyridine-phosphonate (as the negative component) and nanoparticulate TiO 2 (ca. 6 nm diameter, as the positive component) was formed and investigated first on simple ITO electrodes and then on ITO junction electrodes. The charge transport within this film due to Ru(II/III) redox switching (electron hopping) was investigated and an apparent diffusion coefficient of ca. Dapp = 2 (± 1) × 10-15 m2 s -1 was observed with minimal contributions from intra-molecular Ru-Ru interactions. The benefits of FIB-cut ITO junctions as a tool in determining charge hopping rates are highlighted.

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