Electron and hole mobilities in semimetallic bismuth nanowires

Kiyoung Lee; Seunghyun Lee; S. N. Holmes; Jinhee Ham; Wooyoung Lee; C. H.W. Barnes

doi:10.1103/PhysRevB.82.245310

Electron and hole mobilities in semimetallic bismuth nanowires

Kiyoung Lee, Seunghyun Lee, S. N. Holmes, Jinhee Ham, Wooyoung Lee, C. H.W. Barnes

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

The Shubnikov de Haas effect is used to determine the electron and hole mobilities in a bismuth nanowire. We identify an excess hole density from a doping effect introduced during the on-film-formation-of-nanowires fabrication process. Three electron subbands and a single hole band contribute to the oscillatory magnetoresistance and these bands can be decomposed by fast Fourier transform analysis of ρ_xx into different orbits on an anisotropic Fermi surface. A nonharmonic Shubnikov de Haas oscillation from the hole band is due to variation in the carrier density with applied magnetic field. Electron and hole scattering is dominated by a short-range potential with a hole mobility of 5000 cm2 V⊃-1 s⊃-1 and an electron mobility of 20000 cm2 V⊃-1 s⊃-1 at 1.6 K. Mobility analysis of the fast Fourier transform of ρ_xx is used to determine the individual three electron and single hole subband mobilities.

Original language	English
Article number	245310
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	82
Issue number	24
DOIs	https://doi.org/10.1103/PhysRevB.82.245310
Publication status	Published - 2010

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.82.245310

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abstract = "The Shubnikov de Haas effect is used to determine the electron and hole mobilities in a bismuth nanowire. We identify an excess hole density from a doping effect introduced during the on-film-formation-of-nanowires fabrication process. Three electron subbands and a single hole band contribute to the oscillatory magnetoresistance and these bands can be decomposed by fast Fourier transform analysis of ρxx into different orbits on an anisotropic Fermi surface. A nonharmonic Shubnikov de Haas oscillation from the hole band is due to variation in the carrier density with applied magnetic field. Electron and hole scattering is dominated by a short-range potential with a hole mobility of 5000 cm2 V⊃-1 s⊃-1 and an electron mobility of 20000 cm2 V⊃-1 s⊃-1 at 1.6 K. Mobility analysis of the fast Fourier transform of ρxx is used to determine the individual three electron and single hole subband mobilities.",

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AU - Lee, Seunghyun

AU - Holmes, S. N.

AU - Ham, Jinhee

AU - Lee, Wooyoung

AU - Barnes, C. H.W.

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AB - The Shubnikov de Haas effect is used to determine the electron and hole mobilities in a bismuth nanowire. We identify an excess hole density from a doping effect introduced during the on-film-formation-of-nanowires fabrication process. Three electron subbands and a single hole band contribute to the oscillatory magnetoresistance and these bands can be decomposed by fast Fourier transform analysis of ρxx into different orbits on an anisotropic Fermi surface. A nonharmonic Shubnikov de Haas oscillation from the hole band is due to variation in the carrier density with applied magnetic field. Electron and hole scattering is dominated by a short-range potential with a hole mobility of 5000 cm2 V⊃-1 s⊃-1 and an electron mobility of 20000 cm2 V⊃-1 s⊃-1 at 1.6 K. Mobility analysis of the fast Fourier transform of ρxx is used to determine the individual three electron and single hole subband mobilities.

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Electron and hole mobilities in semimetallic bismuth nanowires

Abstract

All Science Journal Classification (ASJC) codes

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