Electromigration of CVD-copper and PVD-copper polycrystalline lines

Seok Kim; Doo Jin Choi

doi:10.1557/proc-516-281

Electromigration of CVD-copper and PVD-copper polycrystalline lines

Seok Kim, Doo Jin Choi

Department of Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

The electromigration (EM) characteristics of chemical vapor deposited (CVD)-Cu films were compared to those of physical vapor deposited (PVD)-Cu films. The CVD-Cu lines showed shorter lifetime than PVD-Cu. The activation energy of EM was 0.754 eV for the CVD-Cu on SiO₂, showing the grain boundary diffusion as the EM failure mechanism. The higher the resistivity induced, the higher driving force of EM. The PVD-Cu films had a huge domain structure, which act as a larger grain than CVD-Cu grain that result in the longer life-time and the surface diffusion mechanism with the activation energy of 0.244 eV.

Original language	English
Pages (from-to)	281-286
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	516
DOIs	https://doi.org/10.1557/proc-516-281
Publication status	Published - 1998
Event	Proceedings of the 1998 MRS Spring Meeting - San Francisco, CA, USA Duration: 1998 Apr 13 → 1998 Apr 16

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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@article{d3ba25d5d8ff4cffaff78fb76fc2884e,

title = "Electromigration of CVD-copper and PVD-copper polycrystalline lines",

abstract = "The electromigration (EM) characteristics of chemical vapor deposited (CVD)-Cu films were compared to those of physical vapor deposited (PVD)-Cu films. The CVD-Cu lines showed shorter lifetime than PVD-Cu. The activation energy of EM was 0.754 eV for the CVD-Cu on SiO2, showing the grain boundary diffusion as the EM failure mechanism. The higher the resistivity induced, the higher driving force of EM. The PVD-Cu films had a huge domain structure, which act as a larger grain than CVD-Cu grain that result in the longer life-time and the surface diffusion mechanism with the activation energy of 0.244 eV.",

author = "Seok Kim and Choi, {Doo Jin}",

year = "1998",

doi = "10.1557/proc-516-281",

language = "English",

volume = "516",

pages = "281--286",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1998 MRS Spring Meeting ; Conference date: 13-04-1998 Through 16-04-1998",

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TY - JOUR

T1 - Electromigration of CVD-copper and PVD-copper polycrystalline lines

AU - Kim, Seok

AU - Choi, Doo Jin

PY - 1998

Y1 - 1998

N2 - The electromigration (EM) characteristics of chemical vapor deposited (CVD)-Cu films were compared to those of physical vapor deposited (PVD)-Cu films. The CVD-Cu lines showed shorter lifetime than PVD-Cu. The activation energy of EM was 0.754 eV for the CVD-Cu on SiO2, showing the grain boundary diffusion as the EM failure mechanism. The higher the resistivity induced, the higher driving force of EM. The PVD-Cu films had a huge domain structure, which act as a larger grain than CVD-Cu grain that result in the longer life-time and the surface diffusion mechanism with the activation energy of 0.244 eV.

AB - The electromigration (EM) characteristics of chemical vapor deposited (CVD)-Cu films were compared to those of physical vapor deposited (PVD)-Cu films. The CVD-Cu lines showed shorter lifetime than PVD-Cu. The activation energy of EM was 0.754 eV for the CVD-Cu on SiO2, showing the grain boundary diffusion as the EM failure mechanism. The higher the resistivity induced, the higher driving force of EM. The PVD-Cu films had a huge domain structure, which act as a larger grain than CVD-Cu grain that result in the longer life-time and the surface diffusion mechanism with the activation energy of 0.244 eV.

UR - http://www.scopus.com/inward/record.url?scp=0032315039&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032315039&partnerID=8YFLogxK

U2 - 10.1557/proc-516-281

DO - 10.1557/proc-516-281

M3 - Conference article

AN - SCOPUS:0032315039

SN - 0272-9172

VL - 516

SP - 281

EP - 286

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1998 MRS Spring Meeting

Y2 - 13 April 1998 through 16 April 1998

ER -

Electromigration of CVD-copper and PVD-copper polycrystalline lines

Abstract

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