Electromigration-induced failure of GaN multi-quantum well light emitting diode

Hyunsoo Kim; Hyundoek Yang; Chul Huh; Sang Woo Kim; Seong Ju Park; Hyunsang Hwang

doi:10.1049/el:20000657

Electromigration-induced failure of GaN multi-quantum well light emitting diode

Hyunsoo Kim, Hyundoek Yang, Chul Huh, Sang Woo Kim, Seong Ju Park, Hyunsang Hwang

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

42 Citations (Scopus)

Abstract

The reliability characteristics of a multiple-quantum well (MQW) GaN/InGaN light emitting diode (LED) under various stress current densities were investigated. Based on the contact electromigration failure model of a silicon device, the lifetime of the LED device under normal operating current condition can be obtained from the relation t_f = C/Iⁿ. Given the significant change in the value of n as a function of the stress current density due to the joule-heating, the stress current must be reduced to accurately estimate the device lifetime at operating current conditions.

Original language	English
Pages (from-to)	908-910
Number of pages	3
Journal	Electronics Letters
Volume	36
Issue number	10
DOIs	https://doi.org/10.1049/el:20000657
Publication status	Published - 2000 May 11

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:20000657

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title = "Electromigration-induced failure of GaN multi-quantum well light emitting diode",

abstract = "The reliability characteristics of a multiple-quantum well (MQW) GaN/InGaN light emitting diode (LED) under various stress current densities were investigated. Based on the contact electromigration failure model of a silicon device, the lifetime of the LED device under normal operating current condition can be obtained from the relation tf = C/In. Given the significant change in the value of n as a function of the stress current density due to the joule-heating, the stress current must be reduced to accurately estimate the device lifetime at operating current conditions.",

author = "Hyunsoo Kim and Hyundoek Yang and Chul Huh and Kim, {Sang Woo} and Park, {Seong Ju} and Hyunsang Hwang",

year = "2000",

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language = "English",

volume = "36",

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T1 - Electromigration-induced failure of GaN multi-quantum well light emitting diode

AU - Kim, Hyunsoo

AU - Yang, Hyundoek

AU - Huh, Chul

AU - Kim, Sang Woo

AU - Park, Seong Ju

AU - Hwang, Hyunsang

PY - 2000/5/11

Y1 - 2000/5/11

N2 - The reliability characteristics of a multiple-quantum well (MQW) GaN/InGaN light emitting diode (LED) under various stress current densities were investigated. Based on the contact electromigration failure model of a silicon device, the lifetime of the LED device under normal operating current condition can be obtained from the relation tf = C/In. Given the significant change in the value of n as a function of the stress current density due to the joule-heating, the stress current must be reduced to accurately estimate the device lifetime at operating current conditions.

AB - The reliability characteristics of a multiple-quantum well (MQW) GaN/InGaN light emitting diode (LED) under various stress current densities were investigated. Based on the contact electromigration failure model of a silicon device, the lifetime of the LED device under normal operating current condition can be obtained from the relation tf = C/In. Given the significant change in the value of n as a function of the stress current density due to the joule-heating, the stress current must be reduced to accurately estimate the device lifetime at operating current conditions.

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EP - 910

JO - Electronics Letters

JF - Electronics Letters

IS - 10

ER -

Electromigration-induced failure of GaN multi-quantum well light emitting diode

Abstract

All Science Journal Classification (ASJC) codes

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