Electromigration-induced failure of GaN multi-quantum well light emitting diode

Hyunsoo Kim, Hyundoek Yang, Chul Huh, Sang Woo Kim, Seong Ju Park, Hyunsang Hwang

Research output: Contribution to journalArticlepeer-review

42 Citations (Scopus)


The reliability characteristics of a multiple-quantum well (MQW) GaN/InGaN light emitting diode (LED) under various stress current densities were investigated. Based on the contact electromigration failure model of a silicon device, the lifetime of the LED device under normal operating current condition can be obtained from the relation tf = C/In. Given the significant change in the value of n as a function of the stress current density due to the joule-heating, the stress current must be reduced to accurately estimate the device lifetime at operating current conditions.

Original languageEnglish
Pages (from-to)908-910
Number of pages3
JournalElectronics Letters
Issue number10
Publication statusPublished - 2000 May 11

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering


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