Electromagnetic and mechanical analysis for micromachined filter

Xiuping Li; Jong Gwan Yook; Chun Ying Dong; Hong Wang; Choi Look Law; Sheel Aditya

Electromagnetic and mechanical analysis for micromachined filter

Xiuping Li, Jong Gwan Yook, Chun Ying Dong, Hong Wang, Choi Look Law, Sheel Aditya

Research output: Contribution to conference › Paper › peer-review

Abstract

This paper describes micromachined bandpass filters design at K band on GaAs and silicon substrate, respectively. The performance of three-layer (supported by 2 um AlGaAs membrane) and two-layer (solid) filter structure on GaAs substrate are compared and discussed. Electromagnetic simulation shows less than 1dB insertion loss and acceptable stop band rejection for both the solid two-layer and membrane three-layer filter structure. A two-layer filter structure with cavity on bottom wafer is also proposed on silicon substrate, where a 10 um SiO₂ is used as a membrane. Both EM simulation results and mechanical analysis are provided. The boundary element method is used in mechanical simulation and the deflection of about 1.338 um is obtained for SiO₂ membrane.

Original language	English
Pages	1735-1738
Number of pages	4
Publication status	Published - 2004
Event	2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, China Duration: 2004 Oct 18 → 2004 Oct 21

Other

Other	2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004
Country/Territory	China
City	Beijing
Period	04/10/18 → 04/10/21

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

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title = "Electromagnetic and mechanical analysis for micromachined filter",

abstract = "This paper describes micromachined bandpass filters design at K band on GaAs and silicon substrate, respectively. The performance of three-layer (supported by 2 um AlGaAs membrane) and two-layer (solid) filter structure on GaAs substrate are compared and discussed. Electromagnetic simulation shows less than 1dB insertion loss and acceptable stop band rejection for both the solid two-layer and membrane three-layer filter structure. A two-layer filter structure with cavity on bottom wafer is also proposed on silicon substrate, where a 10 um SiO2 is used as a membrane. Both EM simulation results and mechanical analysis are provided. The boundary element method is used in mechanical simulation and the deflection of about 1.338 um is obtained for SiO2 membrane.",

author = "Xiuping Li and Yook, {Jong Gwan} and Dong, {Chun Ying} and Hong Wang and Law, {Choi Look} and Sheel Aditya",

year = "2004",

language = "English",

pages = "1735--1738",

note = "2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 ; Conference date: 18-10-2004 Through 21-10-2004",

}

TY - CONF

T1 - Electromagnetic and mechanical analysis for micromachined filter

AU - Li, Xiuping

AU - Yook, Jong Gwan

AU - Dong, Chun Ying

AU - Wang, Hong

AU - Law, Choi Look

AU - Aditya, Sheel

PY - 2004

Y1 - 2004

N2 - This paper describes micromachined bandpass filters design at K band on GaAs and silicon substrate, respectively. The performance of three-layer (supported by 2 um AlGaAs membrane) and two-layer (solid) filter structure on GaAs substrate are compared and discussed. Electromagnetic simulation shows less than 1dB insertion loss and acceptable stop band rejection for both the solid two-layer and membrane three-layer filter structure. A two-layer filter structure with cavity on bottom wafer is also proposed on silicon substrate, where a 10 um SiO2 is used as a membrane. Both EM simulation results and mechanical analysis are provided. The boundary element method is used in mechanical simulation and the deflection of about 1.338 um is obtained for SiO2 membrane.

AB - This paper describes micromachined bandpass filters design at K band on GaAs and silicon substrate, respectively. The performance of three-layer (supported by 2 um AlGaAs membrane) and two-layer (solid) filter structure on GaAs substrate are compared and discussed. Electromagnetic simulation shows less than 1dB insertion loss and acceptable stop band rejection for both the solid two-layer and membrane three-layer filter structure. A two-layer filter structure with cavity on bottom wafer is also proposed on silicon substrate, where a 10 um SiO2 is used as a membrane. Both EM simulation results and mechanical analysis are provided. The boundary element method is used in mechanical simulation and the deflection of about 1.338 um is obtained for SiO2 membrane.

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M3 - Paper

AN - SCOPUS:21644472821

SP - 1735

EP - 1738

T2 - 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004

Y2 - 18 October 2004 through 21 October 2004

ER -

Electromagnetic and mechanical analysis for micromachined filter

Abstract

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All Science Journal Classification (ASJC) codes

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