Electrolyte-Gated Graphene Schottky Barrier Transistors

Beom Joon Kim; Euyheon Hwang; Moon Sung Kang; Jeong Ho Cho

doi:10.1002/adma.201502020

Electrolyte-Gated Graphene Schottky Barrier Transistors

Beom Joon Kim, Euyheon Hwang, Moon Sung Kang, Jeong Ho Cho

Department of Chemical and Biomolecular Engineering

Research output: Contribution to journal › Article › peer-review

45 Citations (Scopus)

Abstract

A new device architecture for flexible vertical Schottky barrier (SB) transistors and logic gates based on graphene-organic-semiconductor-metal heterostructures and ion gel gate dielectrics is demonstrated. The devices show well-behaved p- and n-type characteristics under low-voltage operation (<1 V), yielding high current densities (>100 mA cm^-2) and on/off current ratios (>10³).

Original language	English
Pages (from-to)	5875-5881
Number of pages	7
Journal	Advanced Materials
Volume	27
Issue number	39
DOIs	https://doi.org/10.1002/adma.201502020
Publication status	Published - 2015 Oct 1

Bibliographical note

Publisher Copyright:
© 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim.

All Science Journal Classification (ASJC) codes

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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10.1002/adma.201502020

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abstract = "A new device architecture for flexible vertical Schottky barrier (SB) transistors and logic gates based on graphene-organic-semiconductor-metal heterostructures and ion gel gate dielectrics is demonstrated. The devices show well-behaved p- and n-type characteristics under low-voltage operation (<1 V), yielding high current densities (>100 mA cm-2) and on/off current ratios (>103).",

author = "Kim, {Beom Joon} and Euyheon Hwang and Kang, {Moon Sung} and Cho, {Jeong Ho}",

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PY - 2015/10/1

Y1 - 2015/10/1

N2 - A new device architecture for flexible vertical Schottky barrier (SB) transistors and logic gates based on graphene-organic-semiconductor-metal heterostructures and ion gel gate dielectrics is demonstrated. The devices show well-behaved p- and n-type characteristics under low-voltage operation (<1 V), yielding high current densities (>100 mA cm-2) and on/off current ratios (>103).

AB - A new device architecture for flexible vertical Schottky barrier (SB) transistors and logic gates based on graphene-organic-semiconductor-metal heterostructures and ion gel gate dielectrics is demonstrated. The devices show well-behaved p- and n-type characteristics under low-voltage operation (<1 V), yielding high current densities (>100 mA cm-2) and on/off current ratios (>103).

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Electrolyte-Gated Graphene Schottky Barrier Transistors

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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