Electrolyte-Gated Graphene Schottky Barrier Transistors

Beom Joon Kim, Euyheon Hwang, Moon Sung Kang, Jeong Ho Cho

Research output: Contribution to journalArticlepeer-review

45 Citations (Scopus)


A new device architecture for flexible vertical Schottky barrier (SB) transistors and logic gates based on graphene-organic-semiconductor-metal heterostructures and ion gel gate dielectrics is demonstrated. The devices show well-behaved p- and n-type characteristics under low-voltage operation (<1 V), yielding high current densities (>100 mA cm-2) and on/off current ratios (>103).

Original languageEnglish
Pages (from-to)5875-5881
Number of pages7
JournalAdvanced Materials
Issue number39
Publication statusPublished - 2015 Oct 1

Bibliographical note

Publisher Copyright:
© 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim.

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering


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