Luminescent silicon oxides containing radiative centers were obtained by using two different techniques. Silicon rich silicon oxides (SRSOs) were fabricated by rf magnetron sputter deposition and Ge-implanted SiO 2 films were fabricated by ion implantation following the thermal oxidation of Si. Blue and violet photoluminescence were observed from the SRSO and the Ge-implanted SiO 2, respectively. However, the electroluminescence (EL) spectra from both oxides exhibited red and near-infrared luminescence bands. Strong EL was observed only under reverse bias conditions on metal-luminescent oxide-semiconductor structures. The EL intensity and peak position were varied with applied voltages. According to the EL and current-voltage measurements, it is concluded that the possible EL mechanism is the impact ionization of ground state electrons in the radiative centers.
|Number of pages||4|
|Journal||Journal of Applied Physics|
|Publication status||Published - 2002 Apr 1|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)