Electrochromic nanostructures grown on a silicon nanowire template

Yuna Kim; Jehoon Baek; Myoung Ha Kim; Heon Jin Choi; Eunkyoung Kim

doi:10.1016/j.ultramic.2008.04.054

Electrochromic nanostructures grown on a silicon nanowire template

Yuna Kim, Jehoon Baek, Myoung Ha Kim, Heon Jin Choi, Eunkyoung Kim

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

Vertically grown Si nanowires were prepared as a nanotemplate for conducting polymers. Electrochromic (EC) PEDOT (poly(3,4-ethylenedioxythiophene)) layer was successfully grown on Si nanowires by electrochemical polymerization method to form PEDOT nanowires having average wall thickness of ∼60 nm. As-prepared conductive nanowire electrode was applied to a low voltage working EC device by fabricating an all solid state EC device. The EC properties of the device were enhanced in the nanowire structure, showing reversible fast optical transition by applying ±2 V. The response time (t_R) of the EC device from the PEDOT grown on Si nanowires was ∼0.7 s, which was much faster than that from PEDOT film coated on ITO glass electrochemically (t_R=1.9 s).

Original language	English
Pages (from-to)	1224-1227
Number of pages	4
Journal	Ultramicroscopy
Volume	108
Issue number	10
DOIs	https://doi.org/10.1016/j.ultramic.2008.04.054
Publication status	Published - 2008 Sept

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Instrumentation

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10.1016/j.ultramic.2008.04.054

Cite this

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title = "Electrochromic nanostructures grown on a silicon nanowire template",

abstract = "Vertically grown Si nanowires were prepared as a nanotemplate for conducting polymers. Electrochromic (EC) PEDOT (poly(3,4-ethylenedioxythiophene)) layer was successfully grown on Si nanowires by electrochemical polymerization method to form PEDOT nanowires having average wall thickness of ∼60 nm. As-prepared conductive nanowire electrode was applied to a low voltage working EC device by fabricating an all solid state EC device. The EC properties of the device were enhanced in the nanowire structure, showing reversible fast optical transition by applying ±2 V. The response time (tR) of the EC device from the PEDOT grown on Si nanowires was ∼0.7 s, which was much faster than that from PEDOT film coated on ITO glass electrochemically (tR=1.9 s).",

author = "Yuna Kim and Jehoon Baek and Kim, {Myoung Ha} and Choi, {Heon Jin} and Eunkyoung Kim",

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T1 - Electrochromic nanostructures grown on a silicon nanowire template

AU - Kim, Yuna

AU - Baek, Jehoon

AU - Kim, Myoung Ha

AU - Choi, Heon Jin

AU - Kim, Eunkyoung

PY - 2008/9

Y1 - 2008/9

N2 - Vertically grown Si nanowires were prepared as a nanotemplate for conducting polymers. Electrochromic (EC) PEDOT (poly(3,4-ethylenedioxythiophene)) layer was successfully grown on Si nanowires by electrochemical polymerization method to form PEDOT nanowires having average wall thickness of ∼60 nm. As-prepared conductive nanowire electrode was applied to a low voltage working EC device by fabricating an all solid state EC device. The EC properties of the device were enhanced in the nanowire structure, showing reversible fast optical transition by applying ±2 V. The response time (tR) of the EC device from the PEDOT grown on Si nanowires was ∼0.7 s, which was much faster than that from PEDOT film coated on ITO glass electrochemically (tR=1.9 s).

AB - Vertically grown Si nanowires were prepared as a nanotemplate for conducting polymers. Electrochromic (EC) PEDOT (poly(3,4-ethylenedioxythiophene)) layer was successfully grown on Si nanowires by electrochemical polymerization method to form PEDOT nanowires having average wall thickness of ∼60 nm. As-prepared conductive nanowire electrode was applied to a low voltage working EC device by fabricating an all solid state EC device. The EC properties of the device were enhanced in the nanowire structure, showing reversible fast optical transition by applying ±2 V. The response time (tR) of the EC device from the PEDOT grown on Si nanowires was ∼0.7 s, which was much faster than that from PEDOT film coated on ITO glass electrochemically (tR=1.9 s).

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Electrochromic nanostructures grown on a silicon nanowire template

Abstract

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