TY - JOUR
T1 - Electrically Tunable Ideality Factor and Series Resistance of Gate-Controlled Graphene/Pentacene Schottky Junctions
AU - Lee, Tae Yoon
AU - Kim, Yoon Jeong
AU - Ahn, Seokhoon
AU - Jeon, Dae Young
N1 - Publisher Copyright:
© 2013 IEEE.
PY - 2024
Y1 - 2024
N2 - Gate-tunable Schottky barrier diodes find many applications in logic transistors, photodiodes, and sensors. In this work, the electrical properties of Schottky barrier diodes with graphene/pentacene junctions and additional gates were investigated in detail. The results of modeling equations that considered the ideality factor, series resistance, and effective barrier-height according to the gate bias (Vg) were in good agreement with the experimental results. In addition, the dominant conduction mechanism when the effective barrier-height was controlled by Vg is discussed from the perspective of the temperature-dependent currents in Schottky barrier diodes. This work provides critical information that aids our understanding of gated Schottky diodes with graphene/pentacene junctions, increasing the possible practical applications thereof.
AB - Gate-tunable Schottky barrier diodes find many applications in logic transistors, photodiodes, and sensors. In this work, the electrical properties of Schottky barrier diodes with graphene/pentacene junctions and additional gates were investigated in detail. The results of modeling equations that considered the ideality factor, series resistance, and effective barrier-height according to the gate bias (Vg) were in good agreement with the experimental results. In addition, the dominant conduction mechanism when the effective barrier-height was controlled by Vg is discussed from the perspective of the temperature-dependent currents in Schottky barrier diodes. This work provides critical information that aids our understanding of gated Schottky diodes with graphene/pentacene junctions, increasing the possible practical applications thereof.
KW - Gate-tunable Schottky barrier diodes
KW - effective barrier-height
KW - graphene/pentacene junction
KW - ideality factor
KW - modeling
KW - series resistance
UR - http://www.scopus.com/inward/record.url?scp=85193034307&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85193034307&partnerID=8YFLogxK
U2 - 10.1109/JEDS.2024.3397014
DO - 10.1109/JEDS.2024.3397014
M3 - Article
AN - SCOPUS:85193034307
SN - 2168-6734
VL - 12
SP - 379
EP - 383
JO - IEEE Journal of the Electron Devices Society
JF - IEEE Journal of the Electron Devices Society
ER -
