We report on the fabrication of top-gate ZnO thin-film transistors (TFTs) with organic and inorganic nanohybrid dielectric layers that take superlattice form in their inside structure. The nanohybrid dielectrics were prepared by the alternate deposition of organic self-assembled monolayer and oxide monolayer on sputter-deposited ZnO channel. With a 22-nm -thin Al Ox -based hybrid dielectric layer (∼130 nF cm2), our ZnO TFT showed a field mobility of 0.36 cm2 V s operating at 8 V, while the mobility increased up to 0.66 cm2 V s with a 22-nm -thin Al Ox -based/ Ti Ox -based/ Al Ox -based (5.5 nm11 nm5.5 nm and ∼220 nF cm2) triple hybrid layer under 2 V operation. Since both ZnO-TFTs display little gate hysteresis, we conclude that our nanohybrid dielectric approach is promising to achieve a gate-stable low voltage top-gate ZnO-TFTs.
|Journal||Applied Physics Letters|
|Publication status||Published - 2008|
Bibliographical noteFunding Information:
The authors acknowledge the financial support from KOSEF (Program No. R01-2006-000-11277-0), the fundamental R&D Program for Core Technology of Materials funded by the Ministry of Commerce, Industry and Energy, and Brain Korea 21 Program.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)