Electrically stable low voltage ZnO transistors with organic/inorganic nanohybrid dielectrics

Sung Hoon Cha, Min Suk Oh, Kwang H. Lee, Seongil Im, Byoung H. Lee, Myung M. Sung

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36 Citations (Scopus)


We report on the fabrication of top-gate ZnO thin-film transistors (TFTs) with organic and inorganic nanohybrid dielectric layers that take superlattice form in their inside structure. The nanohybrid dielectrics were prepared by the alternate deposition of organic self-assembled monolayer and oxide monolayer on sputter-deposited ZnO channel. With a 22-nm -thin Al Ox -based hybrid dielectric layer (∼130 nF cm2), our ZnO TFT showed a field mobility of 0.36 cm2 V s operating at 8 V, while the mobility increased up to 0.66 cm2 V s with a 22-nm -thin Al Ox -based/ Ti Ox -based/ Al Ox -based (5.5 nm11 nm5.5 nm and ∼220 nF cm2) triple hybrid layer under 2 V operation. Since both ZnO-TFTs display little gate hysteresis, we conclude that our nanohybrid dielectric approach is promising to achieve a gate-stable low voltage top-gate ZnO-TFTs.

Original languageEnglish
Article number023506
JournalApplied Physics Letters
Issue number2
Publication statusPublished - 2008

Bibliographical note

Funding Information:
The authors acknowledge the financial support from KOSEF (Program No. R01-2006-000-11277-0), the fundamental R&D Program for Core Technology of Materials funded by the Ministry of Commerce, Industry and Energy, and Brain Korea 21 Program.

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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