Electrical switching characteristics of nitrogen doped Ge 2Sb2Te5 based Phase Change Random Access Memory Cell

Myoungsub Kim; Jinhyung Jun; Jinho Oh; Hyeongjoon Kim; Jaesung Roh; Sukkyoung Hong; Doojin Choi

doi:10.4028/3-908451-31-0.21

Electrical switching characteristics of nitrogen doped Ge ₂Sb₂Te₅ based Phase Change Random Access Memory Cell

Myoungsub Kim, Jinhyung Jun, Jinho Oh, Hyeongjoon Kim, Jaesung Roh, Sukkyoung Hong, Doojin Choi

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

Ge₂Sb₂Te₅ (GST) has been widely studied for PRAM as reversible phase change material. GST is expected to reduce RESET (crystalline → amorphous) operation power, which is one of important issues for PRAM technology. In order to investigate the effect of nitrogen doping on electrical switching characteristics, we fabricated two kinds of PRAM cells with nitrogen-doped (N-doped) and un-doped GST, which were different bottom electrode contact size (0.80-1.00 μm). N-doped GST PRAM cells have higher dynamic resistance with small sized bottom electrode contact and lower RESET voltage (about 1.2 V, 50 ns) than un-doped GST PRAM cells (about 1.6 V, 50 ns). The resistance switching ratio (R_RESET to R_SET) was about 100. The results of this study indicate that nitrogen doping into GST film and smaller size of bottom electrode contact reduce RESET power for PRAM operation.

Original language	English
Title of host publication	Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia
Publisher	Trans Tech Publications Ltd
Pages	21-24
Number of pages	4
Edition	PART 1
ISBN (Print)	3908451310, 9783908451310
DOIs	https://doi.org/10.4028/3-908451-31-0.21
Publication status	Published - 2007
Event	IUMRS International Conference in Asia 2006, IUMRS-ICA 2006 - Jeju, Korea, Republic of Duration: 2006 Sept 10 → 2006 Sept 14

Publication series

Name	Solid State Phenomena
Number	PART 1
Volume	124-126
ISSN (Print)	1012-0394

Other

Other	IUMRS International Conference in Asia 2006, IUMRS-ICA 2006
Country/Territory	Korea, Republic of
City	Jeju
Period	06/9/10 → 06/9/14

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Materials Science(all)
Condensed Matter Physics

Access to Document

10.4028/3-908451-31-0.21

Cite this

Kim, M., Jun, J., Oh, J., Kim, H., Roh, J., Hong, S., & Choi, D. (2007). Electrical switching characteristics of nitrogen doped Ge ₂Sb₂Te₅ based Phase Change Random Access Memory Cell. In Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia (PART 1 ed., pp. 21-24). (Solid State Phenomena; Vol. 124-126, No. PART 1). Trans Tech Publications Ltd. https://doi.org/10.4028/3-908451-31-0.21

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title = "Electrical switching characteristics of nitrogen doped Ge 2Sb2Te5 based Phase Change Random Access Memory Cell",

abstract = "Ge2Sb2Te5 (GST) has been widely studied for PRAM as reversible phase change material. GST is expected to reduce RESET (crystalline → amorphous) operation power, which is one of important issues for PRAM technology. In order to investigate the effect of nitrogen doping on electrical switching characteristics, we fabricated two kinds of PRAM cells with nitrogen-doped (N-doped) and un-doped GST, which were different bottom electrode contact size (0.80-1.00 μm). N-doped GST PRAM cells have higher dynamic resistance with small sized bottom electrode contact and lower RESET voltage (about 1.2 V, 50 ns) than un-doped GST PRAM cells (about 1.6 V, 50 ns). The resistance switching ratio (RRESET to RSET) was about 100. The results of this study indicate that nitrogen doping into GST film and smaller size of bottom electrode contact reduce RESET power for PRAM operation.",

author = "Myoungsub Kim and Jinhyung Jun and Jinho Oh and Hyeongjoon Kim and Jaesung Roh and Sukkyoung Hong and Doojin Choi",

year = "2007",

doi = "10.4028/3-908451-31-0.21",

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series = "Solid State Phenomena",

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booktitle = "Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia",

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Kim, M, Jun, J, Oh, J, Kim, H, Roh, J, Hong, S & Choi, D 2007, Electrical switching characteristics of nitrogen doped Ge ₂Sb₂Te₅ based Phase Change Random Access Memory Cell. in Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia. PART 1 edn, Solid State Phenomena, no. PART 1, vol. 124-126, Trans Tech Publications Ltd, pp. 21-24, IUMRS International Conference in Asia 2006, IUMRS-ICA 2006, Jeju, Korea, Republic of, 06/9/10. https://doi.org/10.4028/3-908451-31-0.21

Electrical switching characteristics of nitrogen doped Ge ₂Sb₂Te₅ based Phase Change Random Access Memory Cell. / Kim, Myoungsub; Jun, Jinhyung; Oh, Jinho et al.
Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia. PART 1. ed. Trans Tech Publications Ltd, 2007. p. 21-24 (Solid State Phenomena; Vol. 124-126, No. PART 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Electrical switching characteristics of nitrogen doped Ge 2Sb2Te5 based Phase Change Random Access Memory Cell

AU - Kim, Myoungsub

AU - Jun, Jinhyung

AU - Oh, Jinho

AU - Kim, Hyeongjoon

AU - Roh, Jaesung

AU - Hong, Sukkyoung

AU - Choi, Doojin

PY - 2007

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N2 - Ge2Sb2Te5 (GST) has been widely studied for PRAM as reversible phase change material. GST is expected to reduce RESET (crystalline → amorphous) operation power, which is one of important issues for PRAM technology. In order to investigate the effect of nitrogen doping on electrical switching characteristics, we fabricated two kinds of PRAM cells with nitrogen-doped (N-doped) and un-doped GST, which were different bottom electrode contact size (0.80-1.00 μm). N-doped GST PRAM cells have higher dynamic resistance with small sized bottom electrode contact and lower RESET voltage (about 1.2 V, 50 ns) than un-doped GST PRAM cells (about 1.6 V, 50 ns). The resistance switching ratio (RRESET to RSET) was about 100. The results of this study indicate that nitrogen doping into GST film and smaller size of bottom electrode contact reduce RESET power for PRAM operation.

AB - Ge2Sb2Te5 (GST) has been widely studied for PRAM as reversible phase change material. GST is expected to reduce RESET (crystalline → amorphous) operation power, which is one of important issues for PRAM technology. In order to investigate the effect of nitrogen doping on electrical switching characteristics, we fabricated two kinds of PRAM cells with nitrogen-doped (N-doped) and un-doped GST, which were different bottom electrode contact size (0.80-1.00 μm). N-doped GST PRAM cells have higher dynamic resistance with small sized bottom electrode contact and lower RESET voltage (about 1.2 V, 50 ns) than un-doped GST PRAM cells (about 1.6 V, 50 ns). The resistance switching ratio (RRESET to RSET) was about 100. The results of this study indicate that nitrogen doping into GST film and smaller size of bottom electrode contact reduce RESET power for PRAM operation.

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Y2 - 10 September 2006 through 14 September 2006

ER -

Kim M, Jun J, Oh J, Kim H, Roh J, Hong S et al. Electrical switching characteristics of nitrogen doped Ge ₂Sb₂Te₅ based Phase Change Random Access Memory Cell. In Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia. PART 1 ed. Trans Tech Publications Ltd. 2007. p. 21-24. (Solid State Phenomena; PART 1). doi: 10.4028/3-908451-31-0.21