Electrical property improvements of high- k gate oxide by in situ nitrogen incorporation during atomic layer deposition

W. J. Maeng; S. J. Lim; Soon Ju Kwon; H. Kim

doi:10.1063/1.2472189

Electrical property improvements of high- k gate oxide by in situ nitrogen incorporation during atomic layer deposition

W. J. Maeng, S. J. Lim, Soon Ju Kwon, H. Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Atomic layer deposition (ALD) process for oxynitrides of high- k gate dielectrics employing N H4 OH as a single source for reactants, water and N H3, was studied. By this method, nitrogen was incorporated up to 1-3 at. % for ALD Al2 O3 and Ta2 O5 films from metal organic precursors. A comparative study with water based ALD showed that the electrical properties were improved. The leakage current of oxide films from N H4 OH based ALD had been reduced and, more importantly, the dielectric strength was found to be enhanced by more than two orders of magnitude from a time dependent dielectric breakdown measurement.

Original language	English
Article number	062909
Journal	Applied Physics Letters
Volume	90
Issue number	6
DOIs	https://doi.org/10.1063/1.2472189
Publication status	Published - 2007

Bibliographical note

Funding Information:
This work was supported by Korea Research Foundation grants funded by the Korean government (MOEHRD, Grant No. KRF-2005-003-D00144; Basic Research Promotion Fund, Grant No. KRF-2006-311-D00114).

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2472189

Cite this

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title = "Electrical property improvements of high- k gate oxide by in situ nitrogen incorporation during atomic layer deposition",

abstract = "Atomic layer deposition (ALD) process for oxynitrides of high- k gate dielectrics employing N H4 OH as a single source for reactants, water and N H3, was studied. By this method, nitrogen was incorporated up to 1-3 at. % for ALD Al2 O3 and Ta2 O5 films from metal organic precursors. A comparative study with water based ALD showed that the electrical properties were improved. The leakage current of oxide films from N H4 OH based ALD had been reduced and, more importantly, the dielectric strength was found to be enhanced by more than two orders of magnitude from a time dependent dielectric breakdown measurement.",

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doi = "10.1063/1.2472189",

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AU - Maeng, W. J.

AU - Lim, S. J.

AU - Kwon, Soon Ju

AU - Kim, H.

N1 - Funding Information: This work was supported by Korea Research Foundation grants funded by the Korean government (MOEHRD, Grant No. KRF-2005-003-D00144; Basic Research Promotion Fund, Grant No. KRF-2006-311-D00114).

PY - 2007

Y1 - 2007

N2 - Atomic layer deposition (ALD) process for oxynitrides of high- k gate dielectrics employing N H4 OH as a single source for reactants, water and N H3, was studied. By this method, nitrogen was incorporated up to 1-3 at. % for ALD Al2 O3 and Ta2 O5 films from metal organic precursors. A comparative study with water based ALD showed that the electrical properties were improved. The leakage current of oxide films from N H4 OH based ALD had been reduced and, more importantly, the dielectric strength was found to be enhanced by more than two orders of magnitude from a time dependent dielectric breakdown measurement.

AB - Atomic layer deposition (ALD) process for oxynitrides of high- k gate dielectrics employing N H4 OH as a single source for reactants, water and N H3, was studied. By this method, nitrogen was incorporated up to 1-3 at. % for ALD Al2 O3 and Ta2 O5 films from metal organic precursors. A comparative study with water based ALD showed that the electrical properties were improved. The leakage current of oxide films from N H4 OH based ALD had been reduced and, more importantly, the dielectric strength was found to be enhanced by more than two orders of magnitude from a time dependent dielectric breakdown measurement.

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Electrical property improvements of high- k gate oxide by in situ nitrogen incorporation during atomic layer deposition

Abstract

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