Electrical properties of the HfO2-Al2O3 nanolaminates with homogeneous and graded compositions on InP

Chandreswar Mahata; Youngseo An; Sungho Choi; Young Chul Byun; Dae Kyoung Kim; Taeyoon Lee; Jiyoung Kim; Mann Ho Cho; Hyoungsub Kim

doi:10.1016/j.cap.2015.11.022

Electrical properties of the HfO₂-Al₂O₃ nanolaminates with homogeneous and graded compositions on InP

Chandreswar Mahata, Youngseo An, Sungho Choi, Young Chul Byun, Dae Kyoung Kim, Taeyoon Lee, Jiyoung Kim, Mann Ho Cho, Hyoungsub Kim

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

For possible application to a gate dielectric in high-performance III-V transistors, nanolaminated HfO₂-Al₂O₃ films with artificial compositional profiles were deposited on n-type InP substrates using atomic layer deposition. The films were vertically graded (HfO₂ and Al₂O₃ at the surface and interface regions, respectively) and had a homogeneous composition. To compare their electrical properties, a similar physical thickness and capacitance-equivalent thickness (CET) were maintained, and the graded structure showed an increase in the Al₂O₃ content near the high-k and InP interface region without an increase in CET, which suppresses the In incorporation at the near-interface region and reduces the density of the interface trap. However, doing so results in a degradation of the leakage current characteristics under voltage stressing when compared to homogeneously-nanolaminated films.

Original language	English
Pages (from-to)	294-299
Number of pages	6
Journal	Current Applied Physics
Volume	16
Issue number	3
DOIs	https://doi.org/10.1016/j.cap.2015.11.022
Publication status	Published - 2016 Mar

Bibliographical note

Funding Information:
This work was supported by the Future Semiconductor Device Technology Development Program (Grant No. 10045216 ) funded by MOTIE (Ministry of Trade, Industry & Energy) and KSRC (Korea Semiconductor Research Consortium). In addition, it was partially supported by the Basic Science Research program (Grant No. 2014R1A4A1008474 ) through the National Research Foundation of Korea funded by the Ministry of Education and the Ministry of Science, ICT & Future Planning.

Publisher Copyright:
© 2015 Elsevier B.V. All rights reserved.

All Science Journal Classification (ASJC) codes

Materials Science(all)
Physics and Astronomy(all)

Access to Document

10.1016/j.cap.2015.11.022

Cite this

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title = "Electrical properties of the HfO2-Al2O3 nanolaminates with homogeneous and graded compositions on InP",

abstract = "For possible application to a gate dielectric in high-performance III-V transistors, nanolaminated HfO2-Al2O3 films with artificial compositional profiles were deposited on n-type InP substrates using atomic layer deposition. The films were vertically graded (HfO2 and Al2O3 at the surface and interface regions, respectively) and had a homogeneous composition. To compare their electrical properties, a similar physical thickness and capacitance-equivalent thickness (CET) were maintained, and the graded structure showed an increase in the Al2O3 content near the high-k and InP interface region without an increase in CET, which suppresses the In incorporation at the near-interface region and reduces the density of the interface trap. However, doing so results in a degradation of the leakage current characteristics under voltage stressing when compared to homogeneously-nanolaminated films.",

author = "Chandreswar Mahata and Youngseo An and Sungho Choi and Byun, {Young Chul} and Kim, {Dae Kyoung} and Taeyoon Lee and Jiyoung Kim and Cho, {Mann Ho} and Hyoungsub Kim",

note = "Funding Information: This work was supported by the Future Semiconductor Device Technology Development Program (Grant No. 10045216 ) funded by MOTIE (Ministry of Trade, Industry & Energy) and KSRC (Korea Semiconductor Research Consortium). In addition, it was partially supported by the Basic Science Research program (Grant No. 2014R1A4A1008474 ) through the National Research Foundation of Korea funded by the Ministry of Education and the Ministry of Science, ICT & Future Planning. Publisher Copyright: {\textcopyright} 2015 Elsevier B.V. All rights reserved.",

year = "2016",

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doi = "10.1016/j.cap.2015.11.022",

language = "English",

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AU - Mahata, Chandreswar

AU - An, Youngseo

AU - Choi, Sungho

AU - Byun, Young Chul

AU - Kim, Dae Kyoung

AU - Lee, Taeyoon

AU - Kim, Jiyoung

AU - Cho, Mann Ho

AU - Kim, Hyoungsub

N1 - Funding Information: This work was supported by the Future Semiconductor Device Technology Development Program (Grant No. 10045216 ) funded by MOTIE (Ministry of Trade, Industry & Energy) and KSRC (Korea Semiconductor Research Consortium). In addition, it was partially supported by the Basic Science Research program (Grant No. 2014R1A4A1008474 ) through the National Research Foundation of Korea funded by the Ministry of Education and the Ministry of Science, ICT & Future Planning. Publisher Copyright: © 2015 Elsevier B.V. All rights reserved.

PY - 2016/3

Y1 - 2016/3

N2 - For possible application to a gate dielectric in high-performance III-V transistors, nanolaminated HfO2-Al2O3 films with artificial compositional profiles were deposited on n-type InP substrates using atomic layer deposition. The films were vertically graded (HfO2 and Al2O3 at the surface and interface regions, respectively) and had a homogeneous composition. To compare their electrical properties, a similar physical thickness and capacitance-equivalent thickness (CET) were maintained, and the graded structure showed an increase in the Al2O3 content near the high-k and InP interface region without an increase in CET, which suppresses the In incorporation at the near-interface region and reduces the density of the interface trap. However, doing so results in a degradation of the leakage current characteristics under voltage stressing when compared to homogeneously-nanolaminated films.

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