Electrical properties of Pd-based ohmic contact to p-GaN

Dae Woo Kim, Jun Cheol Bae, Woo Jin Kim, Hong Koo Baik, Sung Man Lee

Research output: Contribution to journalConference articlepeer-review

13 Citations (Scopus)


The room-temperature ohmic behavior of palladium-based ohmic contact to p-GaN grown by metallorganic chemical vapor deposition (MOCVD) was investigated. Metal contact systems were deposited and current-voltage measurements were performed to examine room-temperature ohmic behavior. Good ohmic characteristics were shown by palladium-based contacts before annealing. The Schottky barrier height of the Pd/p-GaN was measured to be 0.47 eV.

Original languageEnglish
Pages (from-to)609-614
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number3
Publication statusPublished - 2001 May
Event13th International Vaccum Microelectronics Conference - Guangzhou, China
Duration: 2000 Aug 142000 Aug 17

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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