Abstract
The room-temperature ohmic behavior of palladium-based ohmic contact to p-GaN grown by metallorganic chemical vapor deposition (MOCVD) was investigated. Metal contact systems were deposited and current-voltage measurements were performed to examine room-temperature ohmic behavior. Good ohmic characteristics were shown by palladium-based contacts before annealing. The Schottky barrier height of the Pd/p-GaN was measured to be 0.47 eV.
| Original language | English |
|---|---|
| Pages (from-to) | 609-614 |
| Number of pages | 6 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 19 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2001 May |
| Event | 13th International Vaccum Microelectronics Conference - Guangzhou, China Duration: 2000 Aug 14 → 2000 Aug 17 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering