Electrical properties of bromine doped SnSe2 van der Waals material

Da Seul Hyeon; Min Suk Oh; Jin Tae Kim; Yong Jei Lee; Sang Il Kim; Seung Pil Moon; Nadra Hamayoun; Sung Wng Kim; Kyu Hyoung Lee; Joonho Bang; Kimoon Lee

doi:10.1088/1361-6463/aae257

Electrical properties of bromine doped SnSe₂ van der Waals material

Da Seul Hyeon, Min Suk Oh, Jin Tae Kim, Yong Jei Lee, Sang Il Kim, Seung Pil Moon, Nadra Hamayoun, Sung Wng Kim, Kyu Hyoung Lee, Joonho Bang, Kimoon Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Electrical properties of Br-doped SnSe₂ van der Waals (vdW) materials are investigated by synthesizing polycrystalline SnSe_2-xBr_x via a solid-state reaction route. From the x-ray diffraction and Raman spectra results, it can be confirmed that Br impurity substitutes well on a Se-site by minimizing the lattice deformation as well as the red-shift of A _1g vibrational mode corresponding to the Sn-Se bond. Electrical characterization reveals that Br dopant is an efficient electron donor for vdW SnSe₂ system as it easily encourages the electron carrier concentration from ∼10¹⁷ to ∼10²⁰ cm^-3, thus resulting in the semiconductor-metal transition behavior.

Original language	English
Article number	455102
Journal	Journal of Physics D: Applied Physics
Volume	51
Issue number	45
DOIs	https://doi.org/10.1088/1361-6463/aae257
Publication status	Published - 2018 Oct 9

Bibliographical note

Funding Information:
This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2016R1D1A3B03933785) and under the framework of international cooperation program managed by the National Research Foundation of Korea (NRF-2017K2A9A2A08000214, FY2017). This work was also supported by the Korea Electric Power Corporation. KL acknowledges Creative Materials Discovery Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (2015M3D1A1070639).

Publisher Copyright:
© 2018 IOP Publishing Ltd.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Acoustics and Ultrasonics
Surfaces, Coatings and Films

Access to Document

10.1088/1361-6463/aae257

Cite this

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title = "Electrical properties of bromine doped SnSe2 van der Waals material",

abstract = "Electrical properties of Br-doped SnSe2 van der Waals (vdW) materials are investigated by synthesizing polycrystalline SnSe2-xBrx via a solid-state reaction route. From the x-ray diffraction and Raman spectra results, it can be confirmed that Br impurity substitutes well on a Se-site by minimizing the lattice deformation as well as the red-shift of A 1g vibrational mode corresponding to the Sn-Se bond. Electrical characterization reveals that Br dopant is an efficient electron donor for vdW SnSe2 system as it easily encourages the electron carrier concentration from ∼1017 to ∼1020 cm-3, thus resulting in the semiconductor-metal transition behavior.",

author = "Hyeon, {Da Seul} and Oh, {Min Suk} and Kim, {Jin Tae} and Lee, {Yong Jei} and Kim, {Sang Il} and Moon, {Seung Pil} and Nadra Hamayoun and Kim, {Sung Wng} and Lee, {Kyu Hyoung} and Joonho Bang and Kimoon Lee",

note = "Funding Information: This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2016R1D1A3B03933785) and under the framework of international cooperation program managed by the National Research Foundation of Korea (NRF-2017K2A9A2A08000214, FY2017). This work was also supported by the Korea Electric Power Corporation. KL acknowledges Creative Materials Discovery Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (2015M3D1A1070639). Publisher Copyright: {\textcopyright} 2018 IOP Publishing Ltd.",

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T1 - Electrical properties of bromine doped SnSe2 van der Waals material

AU - Hyeon, Da Seul

AU - Oh, Min Suk

AU - Kim, Jin Tae

AU - Lee, Yong Jei

AU - Kim, Sang Il

AU - Moon, Seung Pil

AU - Hamayoun, Nadra

AU - Kim, Sung Wng

AU - Lee, Kyu Hyoung

AU - Bang, Joonho

AU - Lee, Kimoon

N1 - Funding Information: This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2016R1D1A3B03933785) and under the framework of international cooperation program managed by the National Research Foundation of Korea (NRF-2017K2A9A2A08000214, FY2017). This work was also supported by the Korea Electric Power Corporation. KL acknowledges Creative Materials Discovery Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (2015M3D1A1070639). Publisher Copyright: © 2018 IOP Publishing Ltd.

PY - 2018/10/9

Y1 - 2018/10/9

N2 - Electrical properties of Br-doped SnSe2 van der Waals (vdW) materials are investigated by synthesizing polycrystalline SnSe2-xBrx via a solid-state reaction route. From the x-ray diffraction and Raman spectra results, it can be confirmed that Br impurity substitutes well on a Se-site by minimizing the lattice deformation as well as the red-shift of A 1g vibrational mode corresponding to the Sn-Se bond. Electrical characterization reveals that Br dopant is an efficient electron donor for vdW SnSe2 system as it easily encourages the electron carrier concentration from ∼1017 to ∼1020 cm-3, thus resulting in the semiconductor-metal transition behavior.

AB - Electrical properties of Br-doped SnSe2 van der Waals (vdW) materials are investigated by synthesizing polycrystalline SnSe2-xBrx via a solid-state reaction route. From the x-ray diffraction and Raman spectra results, it can be confirmed that Br impurity substitutes well on a Se-site by minimizing the lattice deformation as well as the red-shift of A 1g vibrational mode corresponding to the Sn-Se bond. Electrical characterization reveals that Br dopant is an efficient electron donor for vdW SnSe2 system as it easily encourages the electron carrier concentration from ∼1017 to ∼1020 cm-3, thus resulting in the semiconductor-metal transition behavior.

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