Electrical joule heating for the isolation of ZnO nanowire channel and subsequent high-performance 1D circuit integration

Syed Raza Ali Raza; June Yeong Lim; Zamir ul Hassan; Seongil Im; Young Tack Lee

doi:10.1016/j.cap.2020.09.011

Electrical joule heating for the isolation of ZnO nanowire channel and subsequent high-performance 1D circuit integration

Syed Raza Ali Raza, June Yeong Lim, Zamir ul Hassan, Seongil Im, Young Tack Lee

Department of Physics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

In this work, electrical Joule heating (J-H) was employed for the first time to electrically isolate ZnO nanowire FETs array for one dimensional (1D) logic applications without any physical and electrical damages. The electrical properties of the isolated nanowire FETs were found to be superior to non-isolated FETs came from the neighboring gate effect. Finally, we investigated ZnO nanowire-based NOT, NAND, and NOR logic gates with the J-H nanowire isolation technique. The isolated logic gates clearly show much lower output voltage off level than the non-isolated circuits thus resulting in more accurate and reliable 1D electronic applications.

Original language	English
Pages (from-to)	1424-1428
Number of pages	5
Journal	Current Applied Physics
Volume	20
Issue number	12
DOIs	https://doi.org/10.1016/j.cap.2020.09.011
Publication status	Published - 2020 Dec

Bibliographical note

Funding Information:
YT Lee acknowledges the National Research Foundation of Korea (NRF) (Grant No. 2019R1F1A1060173 ). S Im acknowledges the National Research Foundation of Korea (NRF) (SRC program, Grant No. 2017R1A5A1014862 , vdWMRC center). SRA Raza acknowledges financial support from Higher Education Commission (HEC) of Pakistan and University of Azad Jammu and Kashmir .

Funding Information:
YT Lee acknowledges the National Research Foundation of Korea (NRF) (Grant No. 2019R1F1A1060173). S Im acknowledges the National Research Foundation of Korea (NRF) (SRC program, Grant No. 2017R1A5A1014862, vdWMRC center). SRA Raza acknowledges financial support from Higher Education Commission (HEC) of Pakistan and University of Azad Jammu and Kashmir.

Publisher Copyright:
© 2020 Korean Physical Society

All Science Journal Classification (ASJC) codes

Materials Science(all)
Physics and Astronomy(all)

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title = "Electrical joule heating for the isolation of ZnO nanowire channel and subsequent high-performance 1D circuit integration",

abstract = "In this work, electrical Joule heating (J-H) was employed for the first time to electrically isolate ZnO nanowire FETs array for one dimensional (1D) logic applications without any physical and electrical damages. The electrical properties of the isolated nanowire FETs were found to be superior to non-isolated FETs came from the neighboring gate effect. Finally, we investigated ZnO nanowire-based NOT, NAND, and NOR logic gates with the J-H nanowire isolation technique. The isolated logic gates clearly show much lower output voltage off level than the non-isolated circuits thus resulting in more accurate and reliable 1D electronic applications.",

author = "Raza, {Syed Raza Ali} and Lim, {June Yeong} and Hassan, {Zamir ul} and Seongil Im and Lee, {Young Tack}",

note = "Funding Information: YT Lee acknowledges the National Research Foundation of Korea (NRF) (Grant No. 2019R1F1A1060173 ). S Im acknowledges the National Research Foundation of Korea (NRF) (SRC program, Grant No. 2017R1A5A1014862 , vdWMRC center). SRA Raza acknowledges financial support from Higher Education Commission (HEC) of Pakistan and University of Azad Jammu and Kashmir . Funding Information: YT Lee acknowledges the National Research Foundation of Korea (NRF) (Grant No. 2019R1F1A1060173). S Im acknowledges the National Research Foundation of Korea (NRF) (SRC program, Grant No. 2017R1A5A1014862, vdWMRC center). SRA Raza acknowledges financial support from Higher Education Commission (HEC) of Pakistan and University of Azad Jammu and Kashmir. Publisher Copyright: {\textcopyright} 2020 Korean Physical Society",

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AU - Raza, Syed Raza Ali

AU - Lim, June Yeong

AU - Hassan, Zamir ul

AU - Im, Seongil

AU - Lee, Young Tack

N1 - Funding Information: YT Lee acknowledges the National Research Foundation of Korea (NRF) (Grant No. 2019R1F1A1060173 ). S Im acknowledges the National Research Foundation of Korea (NRF) (SRC program, Grant No. 2017R1A5A1014862 , vdWMRC center). SRA Raza acknowledges financial support from Higher Education Commission (HEC) of Pakistan and University of Azad Jammu and Kashmir . Funding Information: YT Lee acknowledges the National Research Foundation of Korea (NRF) (Grant No. 2019R1F1A1060173). S Im acknowledges the National Research Foundation of Korea (NRF) (SRC program, Grant No. 2017R1A5A1014862, vdWMRC center). SRA Raza acknowledges financial support from Higher Education Commission (HEC) of Pakistan and University of Azad Jammu and Kashmir. Publisher Copyright: © 2020 Korean Physical Society

PY - 2020/12

Y1 - 2020/12

N2 - In this work, electrical Joule heating (J-H) was employed for the first time to electrically isolate ZnO nanowire FETs array for one dimensional (1D) logic applications without any physical and electrical damages. The electrical properties of the isolated nanowire FETs were found to be superior to non-isolated FETs came from the neighboring gate effect. Finally, we investigated ZnO nanowire-based NOT, NAND, and NOR logic gates with the J-H nanowire isolation technique. The isolated logic gates clearly show much lower output voltage off level than the non-isolated circuits thus resulting in more accurate and reliable 1D electronic applications.

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Electrical joule heating for the isolation of ZnO nanowire channel and subsequent high-performance 1D circuit integration

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