Electrical contact tunable direct printing route for a ZnO nanowire Schottky diode

Tae Il Lee; Won Jin Choi; Jyoti Prakash Kar; Youn Hee Kang; Joo Hee Jeon; Jee Ho Park; Youn Sang Kim; Hong Koo Baik; Jae Min Myoung

doi:10.1021/nl101684c

Electrical contact tunable direct printing route for a ZnO nanowire Schottky diode

Tae Il Lee, Won Jin Choi, Jyoti Prakash Kar, Youn Hee Kang, Joo Hee Jeon, Jee Ho Park, Youn Sang Kim, Hong Koo Baik, Jae Min Myoung

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

Although writing was the first human process for communication, it may now become the main process in the electronics industry, because in the industry the programmability as an inherent property is a necessary requirement for next-generation electronics. As an effort to open the era of writing electronics, here we show the feasibility of the direct printing of a high-performance inorganic single crystalline semiconductor nanowire (NW) Schottky diode (SD), including Schottky and Ohmic contacts in series, using premetallization and wrapping with metallic nanofoil. To verify the feasibility of our process, SDs made of Al-premetalized ZnO NWs and plain ZnO NWs were compared with each other. Even with cold direct printing, the Al-premetalized ZnO NW SD showed higher performance, specifically 1.52 in the ideality factor and 1.58 × 10⁵ in its rectification ratio.

Original language	English
Pages (from-to)	3517-3523
Number of pages	7
Journal	Nano letters
Volume	10
Issue number	9
DOIs	https://doi.org/10.1021/nl101684c
Publication status	Published - 2010 Sept 8

All Science Journal Classification (ASJC) codes

Bioengineering
Chemistry(all)
Materials Science(all)
Condensed Matter Physics
Mechanical Engineering

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10.1021/nl101684c

Cite this

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title = "Electrical contact tunable direct printing route for a ZnO nanowire Schottky diode",

abstract = "Although writing was the first human process for communication, it may now become the main process in the electronics industry, because in the industry the programmability as an inherent property is a necessary requirement for next-generation electronics. As an effort to open the era of writing electronics, here we show the feasibility of the direct printing of a high-performance inorganic single crystalline semiconductor nanowire (NW) Schottky diode (SD), including Schottky and Ohmic contacts in series, using premetallization and wrapping with metallic nanofoil. To verify the feasibility of our process, SDs made of Al-premetalized ZnO NWs and plain ZnO NWs were compared with each other. Even with cold direct printing, the Al-premetalized ZnO NW SD showed higher performance, specifically 1.52 in the ideality factor and 1.58 × 105 in its rectification ratio.",

author = "Lee, {Tae Il} and Choi, {Won Jin} and Kar, {Jyoti Prakash} and Kang, {Youn Hee} and Jeon, {Joo Hee} and Park, {Jee Ho} and Kim, {Youn Sang} and Baik, {Hong Koo} and Myoung, {Jae Min}",

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AU - Lee, Tae Il

AU - Choi, Won Jin

AU - Kar, Jyoti Prakash

AU - Kang, Youn Hee

AU - Jeon, Joo Hee

AU - Park, Jee Ho

AU - Kim, Youn Sang

AU - Baik, Hong Koo

AU - Myoung, Jae Min

PY - 2010/9/8

Y1 - 2010/9/8

N2 - Although writing was the first human process for communication, it may now become the main process in the electronics industry, because in the industry the programmability as an inherent property is a necessary requirement for next-generation electronics. As an effort to open the era of writing electronics, here we show the feasibility of the direct printing of a high-performance inorganic single crystalline semiconductor nanowire (NW) Schottky diode (SD), including Schottky and Ohmic contacts in series, using premetallization and wrapping with metallic nanofoil. To verify the feasibility of our process, SDs made of Al-premetalized ZnO NWs and plain ZnO NWs were compared with each other. Even with cold direct printing, the Al-premetalized ZnO NW SD showed higher performance, specifically 1.52 in the ideality factor and 1.58 × 105 in its rectification ratio.

AB - Although writing was the first human process for communication, it may now become the main process in the electronics industry, because in the industry the programmability as an inherent property is a necessary requirement for next-generation electronics. As an effort to open the era of writing electronics, here we show the feasibility of the direct printing of a high-performance inorganic single crystalline semiconductor nanowire (NW) Schottky diode (SD), including Schottky and Ohmic contacts in series, using premetallization and wrapping with metallic nanofoil. To verify the feasibility of our process, SDs made of Al-premetalized ZnO NWs and plain ZnO NWs were compared with each other. Even with cold direct printing, the Al-premetalized ZnO NW SD showed higher performance, specifically 1.52 in the ideality factor and 1.58 × 105 in its rectification ratio.

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Electrical contact tunable direct printing route for a ZnO nanowire Schottky diode

Abstract

All Science Journal Classification (ASJC) codes

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