Electrical characterization and conduction mechanism of high-k Ti 1-xSixO2 gate dielectrics

Chang Eun Kim; Pyung Moon; Edward Namkyu Cho; Sungyeon Kim; Jae Min Myoung; Ilgu Yun

doi:10.1109/INEC.2010.5424660

Electrical characterization and conduction mechanism of high-k Ti _1-xSi_xO₂ gate dielectrics

Chang Eun Kim, Pyung Moon, Edward Namkyu Cho, Sungyeon Kim, Jae Min Myoung, Ilgu Yun

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

Ti_1-xSi_xO₂ dielectric thin films were prepared by co-sputtering deposition at room temperature. Electrical properties of high-k Ti_1-xSi_xO₂ dielectric thin film were characterized and the leakage current mechanism was analyzed. As the TiO ₂ power increases, the dielectric constant is increased from 14 to 43 and the dominant leakage current mechanism is changed from Schottky emission to Poole-Frenkel emission.

Original language	English
Title of host publication	INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages	242-243
Number of pages	2
DOIs	https://doi.org/10.1109/INEC.2010.5424660
Publication status	Published - 2010
Event	2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China Duration: 2010 Jan 3 → 2010 Jan 8

Publication series

Name	INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

Other

Other	2010 3rd International Nanoelectronics Conference, INEC 2010
Country/Territory	China
City	Hongkong
Period	10/1/3 → 10/1/8

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/INEC.2010.5424660

Cite this

Kim, C. E., Moon, P., Cho, E. N., Kim, S., Myoung, J. M., & Yun, I. (2010). Electrical characterization and conduction mechanism of high-k Ti _1-xSi_xO₂ gate dielectrics. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings (pp. 242-243). Article 5424660 (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings). https://doi.org/10.1109/INEC.2010.5424660

@inproceedings{49f4d5d3acca48028e3a097c7e4bbe06,

title = "Electrical characterization and conduction mechanism of high-k Ti 1-xSixO2 gate dielectrics",

abstract = "Ti1-xSixO2 dielectric thin films were prepared by co-sputtering deposition at room temperature. Electrical properties of high-k Ti1-xSixO2 dielectric thin film were characterized and the leakage current mechanism was analyzed. As the TiO 2 power increases, the dielectric constant is increased from 14 to 43 and the dominant leakage current mechanism is changed from Schottky emission to Poole-Frenkel emission.",

author = "Kim, {Chang Eun} and Pyung Moon and Cho, {Edward Namkyu} and Sungyeon Kim and Myoung, {Jae Min} and Ilgu Yun",

year = "2010",

doi = "10.1109/INEC.2010.5424660",

language = "English",

isbn = "9781424435449",

series = "INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings",

pages = "242--243",

booktitle = "INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings",

note = "2010 3rd International Nanoelectronics Conference, INEC 2010 ; Conference date: 03-01-2010 Through 08-01-2010",

}

Kim, CE, Moon, P, Cho, EN, Kim, S, Myoung, JM & Yun, I 2010, Electrical characterization and conduction mechanism of high-k Ti _1-xSi_xO₂ gate dielectrics. in INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings., 5424660, INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings, pp. 242-243, 2010 3rd International Nanoelectronics Conference, INEC 2010, Hongkong, China, 10/1/3. https://doi.org/10.1109/INEC.2010.5424660

Electrical characterization and conduction mechanism of high-k Ti _1-xSi_xO₂ gate dielectrics. / Kim, Chang Eun; Moon, Pyung; Cho, Edward Namkyu et al.
INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 242-243 5424660 (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AB - Ti1-xSixO2 dielectric thin films were prepared by co-sputtering deposition at room temperature. Electrical properties of high-k Ti1-xSixO2 dielectric thin film were characterized and the leakage current mechanism was analyzed. As the TiO 2 power increases, the dielectric constant is increased from 14 to 43 and the dominant leakage current mechanism is changed from Schottky emission to Poole-Frenkel emission.

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